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参数资料
| 型号： | AT28BV256-20TI |
| 元件分类： | EEPROM |
| 英文描述： | 128Kx8 EEPROM |
| 中文描述： | 128Kx8 EEPROM |
| 文件页数： | 6/12页 |
| 文件大小： | 285K |
| 代理商： | AT28BV256-20TI |
AT28BV256
3
Device Operation
READ: The AT28BV256 is accessed like a Static RAM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in the high
impedance state when either CE or OE is high. This dual-
line control gives designers flexibility in preventing bus con-
tention in their system.
BYTE WRITE: A low pulse on the WE or CE input with
CE or WE low (respectively) and OE high initiates a write
cycle. The address is latched on the falling edge of CE or
WE, whichever occurs last. The data is latched by the first
rising edge of CE or WE. Once a byte write has been
started it will automatically time itself to completion. Once a
programming operation has been initiated and for the dura-
tion of t
WC, a read operation will effectively be a polling
operation.
PA GE WR ITE: T h e pa ge w r it e op er a t i o n o f th e
AT28BV256 allows 1 to 64 bytes of data to be written into
the device during a single internal programming period. A
page write operation is initiated in the same manner as a
byte write; the first byte written can then be followed by 1 to
63 additional bytes. Each successive byte must be written
within 150
s (t
BLC) of the previous byte. If the tBLC limit is
exceeded the AT28BV256 will cease accepting data and
commence the internal programming operation. All bytes
during a page write operation must reside on the same
page as defined by the state of the A6 - A14 inputs. For
each WE high to low transition during the page write opera-
tion, A6 - A14 must be the same.
The A0 to A5 inputs are used to specify which bytes within
the page are to be written. The bytes may be loaded in any
order and may be altered within the same load period. Only
bytes which are specified for writing will be written; unnec-
essary cycling of other bytes within the page does not
occur.
DATA POLLING: The AT28BV256 features DATA Polling
to indicate the end of a write cycle. During a byte or page
write cycle an attempted read of the last byte written will
result in the complement of the written data to be presented
on I/O7. Once the write cycle has been completed, true
data is valid on all outputs, and the next write cycle may
begin. DATA Polling may begin at anytime during the write
cycle.
TOGGLE BIT: In addition to DATA Polling the AT28BV256
provides another method for determining the end of a write
cycle. During the write operation, successive attempts to
read data from the device will result in I/O6 toggling
between one and zero. Once the write has completed, I/O6
will stop toggling and valid data will be read. Reading the
toggle bit may begin at any time during the write cycle.
DATA PROTECTION: If precautions are not taken, inad-
vertent writes may occur during transitions of the host sys-
tem power supply. Atmel has incorporated both hardware
and software features that will protect the memory against
inadvertent writes.
HARDWARE PROTECTION: Hardware features protect
against inadvertent writes to the AT28BV256 in the follow-
ing ways: (a) V
CC power-on delay—once VCC has reached
1.8V (typical) the device will automatically time out 10 ms
(typical) before allowing a write; (b) write inhibit—holding
any one of OE low, CE high or WE high inhibits write
cycles; and (c) noise filter—pulses of less than 15 ns (typi-
cal) on the WE or CE inputs will not initiate a write cycle.
SOFTWARE DATA PROTECTION: A software-controlled
data protection feature has been implemented on the
AT28BV256. Software data protection (SDP) helps prevent
inadvertent writes from corrupting the data in the device.
SDP can prevent inadvertent writes during power-up and
power-down as well as any other potential periods of sys-
tem instability.
The AT28BV256 can only be written using the software
data protection feature. A series of three write commands
to specific addresses with specific data must be presented
to the device before writing in the byte or page mode. The
same three write commands must begin each write opera-
tion. All software write commands must obey the page
mode write timing specifications. The data in the 3-byte
command sequence is not written to the device; the
address in the command sequence can be utilized just like
any other location in the device.
Any attempt to write to the device without the 3-byte
sequence will start the internal write timers. No data will be
written to the device; however, for the duration of t
WC, read
operations will effectively be polling operations.
DEVICE IDENTIFICATION: An extra 64 bytes of EEPROM
memory are available to the user for device identification.
By raising A9 to 12V
± 0.5V and using address locations
7FC0H to 7FFFH the additional bytes may be written to or
read from in the same manner as the regular memory
array.
相关PDF资料 |
PDF描述 |
|---|---|
| AT28BV256-25JC | 128Kx8 EEPROM |
| AT28BV256-25JI | 128Kx8 EEPROM |
| AT28BV256-25PC | 128Kx8 EEPROM |
| AT28BV256-25PI | 128Kx8 EEPROM |
| AT28BV256-25SC | 128Kx8 EEPROM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28BV256-20TI SL383 | 制造商:Atmel Corporation 功能描述:EEPROM Parallel 256K-Bit 32K x 8 3.3V 28-Pin TSOP-I T/R |
| AT28BV256-20TU | 功能描述:电可擦除可编程只读存储器 256K 32K x 8 200 ns 2.7V-3.6V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28BV256-20TU SL235 | 制造商:Atmel Corporation 功能描述: |
| AT28BV256-20TU SL383 | 制造商:Atmel Corporation 功能描述:EEPROM Parallel 256K-Bit 32K x 8 3.3V 28-Pin TSOP-I T/R 制造商:Atmel Corporation 功能描述:EEPROM PARALLEL 256KBIT 32KX8 3.3V 28TSOP-I - Tape and Reel |
| AT28BV256-20TU-235 | 功能描述:IC EEPROM 256KBIT 200NS 28TSOP 制造商:microchip technology 系列:- 包装:剪切带（CT） 零件状态:在售 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:256Kb （32K x 8） 写周期时间 - 字，页:10ms 访问时间:200ns 存储器接口:并联 电压 - 电源:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C（TC） 安装类型:表面贴装 封装/外壳:28-TSSOP（0.465"，11.80mm 宽） 供应商器件封装:28-TSOP 标准包装:1 |
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