参数资料
| 型号： | AT28BV256-20TU |
| 厂商： | Atmel |
| 文件页数： | 5/17页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 256KBIT 200NS 28TSOP |
| 标准包装： | 234 |
| 格式 - 存储器： | EEPROMs - 并行 |
| 存储器类型： | EEPROM |
| 存储容量： | 256K (32K x 8) |
| 速度： | 200ns |
| 接口： | 并联 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 28-TSSOP（0.465"，11.8mm 宽） |
| 供应商设备封装： | 28-TSOP |
| 包装： | 托盘 |
| 产品目录页面： | 1458 (CN2011-ZH PDF) |
AT28BV256
5.6.1
5.6.2
5.7
Hardware Protection
Hardware features protect against inadvertent writes to the AT28BV256 in the following ways:
(a) V CC power-on delay – once V CC has reached 1.8V (typical) the device will automatically time
out 10 ms (typical) before allowing a write; (b) write inhibit – holding any one of OE low, CE high
or WE high inhibits write cycles; and (c) noise filter – pulses of less than 15 ns (typical) on the
WE or CE inputs will not initiate a write cycle.
Software Data Protection
A software-controlled data protection feature has been implemented on the AT28BV256. Soft-
ware data protection (SDP) helps prevent inadvertent writes from corrupting the data in the
device. SDP can prevent inadvertent writes during power-up and power-down as well as any
other potential periods of system instability.
The AT28BV256 can only be written using the software data protection feature. A series of three
write commands to specific addresses with specific data must be presented to the device before
writing in the byte or page mode. The same three write commands must begin each write opera-
tion. All software write commands must obey the page mode write timing specifications. The
data in the 3-byte command sequence is not written to the device; the address in the command
sequence can be utilized just like any other location in the device.
Any attempt to write to the device without the 3-byte sequence will start the internal write timers.
No data will be written to the device; however, for the duration of t WC , read operations will effec-
tively be polling operations.
Device Identification
An extra 64 bytes of EEPROM memory are available to the user for device identification. By rais-
ing A9 to 12V ± 0.5V and using address locations 7FC0H to 7FFFH the additional bytes may be
written to or read from in the same manner as the regular memory array.
5
0273K–PEEPR–2/09
相关PDF资料 |
PDF描述 |
|---|---|
| AT28C256E-15JU | IC EEPROM 256KBIT 150NS 32PLCC |
| AT28C256-15TU | IC EEPROM 256KBIT 150NS 28TSOP |
| AT28C256F-15JU | IC EEPROM 256KBIT 150NS 32PLCC |
| AT28BV256-20JU | IC EEPROM 256KBIT 200NS 32PLCC |
| AT28C256-15JU | IC EEPROM 256KBIT 150NS 32PLCC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28BV256-20TU SL235 | 制造商:Atmel Corporation 功能描述: |
| AT28BV256-20TU SL383 | 制造商:Atmel Corporation 功能描述:EEPROM Parallel 256K-Bit 32K x 8 3.3V 28-Pin TSOP-I T/R 制造商:Atmel Corporation 功能描述:EEPROM PARALLEL 256KBIT 32KX8 3.3V 28TSOP-I - Tape and Reel |
| AT28BV256-20TU-235 | 功能描述:IC EEPROM 256KBIT 200NS 28TSOP 制造商:microchip technology 系列:- 包装:剪切带（CT） 零件状态:在售 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:256Kb （32K x 8） 写周期时间 - 字，页:10ms 访问时间:200ns 存储器接口:并联 电压 - 电源:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C（TC） 安装类型:表面贴装 封装/外壳:28-TSSOP（0.465"，11.80mm 宽） 供应商器件封装:28-TSOP 标准包装:1 |
| AT28BV256-20TU-T | 功能描述:200NS, TSOP, IND TEMP, GREEN 制造商:microchip technology 系列:- 包装:剪切带（CT） 零件状态:在售 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:256Kb （32K x 8） 写周期时间 - 字，页:10ms 访问时间:200ns 存储器接口:并联 电压 - 电源:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C（TC） 安装类型:表面贴装 封装/外壳:28-TSSOP（0.465"，11.80mm 宽） 供应商器件封装:28-TSOP 标准包装:1 |
| AT28BV256-25 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:256K (32K x 8) Battery-Voltage Parallel EEPROMs |
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