参数资料
| 型号： | AT28BV64-30PI |
| 厂商： | Atmel |
| 文件页数： | 1/15页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 64KBIT 300NS 28DIP |
| 标准包装： | 14 |
| 格式 - 存储器： | EEPROMs - 并行 |
| 存储器类型： | EEPROM |
| 存储容量： | 64K (8K x 8) |
| 速度： | 300ns |
| 接口： | 并联 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 28-DIP（0.600"，15.24mm） |
| 供应商设备封装： | 28-PDIP |
| 包装： | 管件 |
| 其它名称： | AT28BV6430PI |
Features
? 2.7V to 3.6V Supply
– Full Read and Write Operation
? Low Power Dissipation
– 8 mA Active Current
– 50 μA CMOS Standby Current
?
?
Read Access Time – 300 ns
Byte Write – 3 ms
?
?
?
?
Direct Microprocessor Control
– DATA Polling
– READY/BUSY Open Drain Output
High Reliability CMOS Technology
– Endurance: 100,000 Cycles
– Data Retention: 10 Years
JEDEC Approved Byte-Wide Pinout
Industrial Temperature Ranges
64K (8K x 8)
Battery-Voltage
Parallel
EEPROMs
1. Description
The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable
Read-only Memory specifically designed for battery powered applications. Its 64K of
memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced
nonvolatile CMOS technology, the device offers access times to 200 ns with power
AT28BV64
Not Recommended
for New Designs.
dissipation less than 30 mW. When the device is deselected the standby current is
less than 50 μA.
The AT28BV64 is accessed like a Static RAM for the read or write cycles without the
need for external components. During a byte write, the address and data are latched
internally, freeing the microprocessor address and data bus for other operations. Fol-
lowing the initiation of a write cycle, the device will go to a busy state and
automatically clear and write the latched data using an internal control timer. The
device includes two methods for detecting the end of a write cycle, level detection of
RDY/BUSY and DATA polling of I/O 7 . Once the end of a write cycle has been
detected, a new access for a read or write can begin.
Atmel’s AT28BV64 has additional features to ensure high quality and manufacturabil-
ity. The device utilizes error correction internally for extended endurance and for
improved data retention characteristics. An extra 32-bytes of EEPROM are available
for device identification or tracking.
0493C–PEEPR–08/07
相关PDF资料 |
PDF描述 |
|---|---|
| AT28BV64-30JI | IC EEPROM 64KBIT 300NS 32PLCC |
| 356-010-525-102 | CARDEDGE 10POS .156 BLACK |
| 356-010-525-101 | CARDEDGE 10POS .156 BLACK |
| 356-010-521-104 | CARDEDGE 10POS .156 BLACK |
| 356-010-521-102 | CARDEDGE 10POS .156 BLACK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28BV64-30SC | 功能描述:电可擦除可编程只读存储器 64k bit RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28BV64-30SI | 功能描述:IC EEPROM 64KBIT 300NS 28SOIC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:32 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:1M (128K x 8) 速度:120ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:32-LCC（J 形引线） 供应商设备封装:32-PLCC 包装:管件 其它名称:AT49BV00112JC |
| AT28BV64-30TC | 功能描述:IC EEPROM 64KBIT 300NS 28TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:32 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:1M (128K x 8) 速度:120ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:32-LCC（J 形引线） 供应商设备封装:32-PLCC 包装:管件 其它名称:AT49BV00112JC |
| AT28BV64-30TI | 功能描述:IC EEPROM 64KBIT 300NS 28TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:32 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:1M (128K x 8) 速度:120ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:32-LCC（J 形引线） 供应商设备封装:32-PLCC 包装:管件 其它名称:AT49BV00112JC |
| AT28BV64B | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection |
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