参数资料
| 型号： | AT28BV64-30PI |
| 厂商： | Atmel |
| 文件页数： | 4/15页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 64KBIT 300NS 28DIP |
| 标准包装： | 14 |
| 格式 - 存储器： | EEPROMs - 并行 |
| 存储器类型： | EEPROM |
| 存储容量： | 64K (8K x 8) |
| 速度： | 300ns |
| 接口： | 并联 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 28-DIP（0.600"，15.24mm） |
| 供应商设备封装： | 28-PDIP |
| 包装： | 管件 |
| 其它名称： | AT28BV6430PI |
5. Device Operation
5.1
5.2
5.3
5.4
Read
Byte Write
READY/BUSY
DATA Polling
The AT28BV64 is accessed like a Static RAM. When CE and OE are low and WE is high, the
data stored at the memory location determined by the address pins is asserted on the outputs.
The outputs are put in a high impedance state whenever CE or OE is high. This dual line control
gives designers increased flexibility in preventing bus contention.
Writing data into the AT28BV64 is similar to writing into a Static RAM. A low pulse on the WE or
CE input with OE high and CE or WE low (respectively) initiates a byte write. The address loca-
tion is latched on the falling edge of WE (or CE); the new data is latched on the rising edge.
Internally, the device performs a self-clear before write. Once a byte write has been started, it
will automatically time itself to completion. Once a programming operation has been initiated and
for the duration of t WC , a read operation will effectively be a polling operation.
Pin 1 is an open drain READY/BUSY output that can be used to detect the end of a write cycle.
RDY/BUSY is actively pulled low during the write cycle and is released at the completion of
the write. The open drain connection allows for OR-tying of several devices to the same
RDY/BUSY line.
The AT28BV64 provides DATA Polling to signal the completion of a write cycle. During a write
cycle, an attempted read of the data being written results in the complement of that data for I/O 7
(the other outputs are indeterminate). When the write cycle is finished, true data appears on all
outputs.
5.5
4
Write Protection
Inadvertent writes to the device are protected against in the following ways: (a) V CC sense – if
V CC is below 1.8V (typical) the write function is inhibited; (b) V CC power on delay – once V CC has
reached 2.0V the device will automatically time out 10 ms (typical) before allowing a byte write;
and (c) Write Inhibit – holding any one of OE low, CE high or WE high inhibits byte write cycles.
AT28BV64
0493C–PEEPR–08/07
相关PDF资料 |
PDF描述 |
|---|---|
| AT28BV64-30JI | IC EEPROM 64KBIT 300NS 32PLCC |
| 356-010-525-102 | CARDEDGE 10POS .156 BLACK |
| 356-010-525-101 | CARDEDGE 10POS .156 BLACK |
| 356-010-521-104 | CARDEDGE 10POS .156 BLACK |
| 356-010-521-102 | CARDEDGE 10POS .156 BLACK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28BV64-30SC | 功能描述:电可擦除可编程只读存储器 64k bit RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28BV64-30SI | 功能描述:IC EEPROM 64KBIT 300NS 28SOIC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:32 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:1M (128K x 8) 速度:120ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:32-LCC（J 形引线） 供应商设备封装:32-PLCC 包装:管件 其它名称:AT49BV00112JC |
| AT28BV64-30TC | 功能描述:IC EEPROM 64KBIT 300NS 28TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:32 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:1M (128K x 8) 速度:120ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:32-LCC（J 形引线） 供应商设备封装:32-PLCC 包装:管件 其它名称:AT49BV00112JC |
| AT28BV64-30TI | 功能描述:IC EEPROM 64KBIT 300NS 28TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:32 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:1M (128K x 8) 速度:120ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:32-LCC（J 形引线） 供应商设备封装:32-PLCC 包装:管件 其它名称:AT49BV00112JC |
| AT28BV64B | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection |
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