参数资料
| 型号： | AT28C64B-15PU |
| 厂商： | Atmel |
| 文件页数： | 1/18页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 64KBIT 150NS 28DIP |
| 标准包装： | 14 |
| 格式 - 存储器： | EEPROMs - 并行 |
| 存储器类型： | EEPROM |
| 存储容量： | 64K (8K x 8) |
| 速度： | 150ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 28-DIP（0.600"，15.24mm） |
| 供应商设备封装： | 28-PDIP |
| 包装： | 管件 |
| 产品目录页面： | 1458 (CN2011-ZH PDF) |
Features
? Fast Read Access Time – 150 ns
? Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes
? Fast Write Cycle Times
– Page Write Cycle Time: 10 ms Maximum (Standard)
2 ms Maximum (Option – Ref. AT28HC64BF Datasheet)
– 1 to 64-byte Page Write Operation
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Low Power Dissipation
– 40 mA Active Current
– 100 μA CMOS Standby Current
Hardware and Software Data Protection
DATA Polling and Toggle Bit for End of Write Detection
High Reliability CMOS Technology
– Endurance: 100,000 Cycles
– Data Retention: 10 Years
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Industrial Temperature Ranges
Green (Pb/Halide-free) Packaging Option Only
64K (8K x 8)
Parallel
EEPROM with
Page Write and
Software Data
Protection
1. Description
AT28C64B
The AT28C64B is a high-performance electrically-erasable and programmable read-
only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 150 ns with power dissipation of just 220 mW. When the device is
deselected, the CMOS standby current is less than 100 μA.
The AT28C64B is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to
64 bytes of data are internally latched, freeing the address and data bus for other
operations. Following the initiation of a write cycle, the device will automatically write
the latched data using an internal control timer. The end of a write cycle can be
detected by DATA POLLING of I/O7. Once the end of a write cycle has been
detected, a new access for a read or write can begin.
Atmel’s AT28C64B has additional features to ensure high quality and manufacturabil-
ity. The device utilizes internal error correction for extended endurance and improved
data retention characteristics. An optional software data protection mechanism is
available to guard against inadvertent writes. The device also includes an extra
64 bytes of EEPROM for device identification or tracking.
0270L–PEEPR–2/09
相关PDF资料 |
PDF描述 |
|---|---|
| AT28C64B-15JU | IC EEPROM 64KBIT 150NS 32PLCC |
| AGLP060V2-VQG176I | IC FPGA IGLOO PLUS 60K 176-VQFN |
| AGLP060V2-VQ176I | IC FPGA IGLOO PLUS 60K 176-VQFN |
| AT28HC64BF-12SU | IC EEPROM 64KBIT 120NS 28SOIC |
| A3P060-1VQ100T | IC FPGA 1KB FLASH 60K 100-VQFP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28C64B-15SA | 功能描述:IC EEPROM 64KBIT 150NS 28SOIC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| AT28C64B-15SC | 功能描述:电可擦除可编程只读存储器 DIE WAFER FORM - 150NS COM TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28C64B-15SI | 功能描述:电可擦除可编程只读存储器 DIE WAFER FORM - 150NS IND TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28C64B-15SI SL527 | 制造商:Atmel Corporation 功能描述:QT# WA145434 |
| AT28C64B-15SU | 功能描述:电可擦除可编程只读存储器 64K 8K x 8 150 ns 4.5V-5.5V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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