参数资料
| 型号： | AT28HC256-12JU |
| 厂商： | Atmel |
| 文件页数： | 1/24页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 256KBIT 120NS 32PLCC |
| 标准包装： | 32 |
| 格式 - 存储器： | EEPROMs - 并行 |
| 存储器类型： | EEPROM |
| 存储容量： | 256K (32K x 8) |
| 速度： | 120ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 32-LCC（J 形引线） |
| 供应商设备封装： | 32-PLCC |
| 包装： | 管件 |
| 产品目录页面： | 1458 (CN2011-ZH PDF) |
Features
? Fast Read Access Time – 70 ns
? Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes
– Internal Control Timer
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Fast Write Cycle Times
– Page Write Cycle Time: 3 ms or 10 ms Maximum
– 1 to 64-byte Page Write Operation
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Low Power Dissipation
– 80 mA Active Current
– 3 mA Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
– Endurance: 10 4 or 10 5 Cycles
– Data Retention: 10 Years
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Full Military and Industrial Temperature Ranges
Green (Pb/Halide-free) Packaging Option
256K (32K x 8)
High-speed
Parallel
EEPROM
AT28HC256
1. Description
The AT28HC256 is a high-performance electrically erasable and programmable read-
only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-
tured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256 offers
access times to 70 ns with power dissipation of just 440 mW. When the AT28HC256
is deselected, the standby current is less than 5 mA.
The AT28HC256 is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
writing of up to 64 bytes simultaneously. During a write cycle, the address and 1 to 64
bytes of data are internally latched, freeing the addresses and data bus for other oper-
ations. Following the initiation of a write cycle, the device will automatically write the
latched data using an internal control timer. The end of a write cycle can be detected
by DATA Polling of I/O7. Once the end of a write cycle has been detected a new
access for a read or write can begin.
Atmel’s 28HC256 has additional features to ensure high quality and manufacturability.
The device utilizes internal error correction for extended endurance and improved
data retention characteristics. An optional software data protection mechanism is
available to guard against inadvertent writes. The device also includes an extra
64 bytes of EEPROM for device identification or tracking.
0007N–PEEPR–9/09
相关PDF资料 |
PDF描述 |
|---|---|
| AT28HC64B-12SU | IC EEPROM 64KBIT 120NS 28SOIC |
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| RSC50DRTI-S734 | CONN EDGECARD 100PS DIP .100 SLD |
| RMC50DRTI-S734 | CONN EDGECARD 100PS DIP .100 SLD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28HC256-12JU SL383 | 制造商:Atmel Corporation 功能描述:EEPROM Parallel 256K-Bit 32K x 8 5V 32-Pin PLCC T/R 制造商:Atmel Corporation 功能描述:EEPROM PARALLEL 256KBIT 32KX8 5V 32PLCC - Tape and Reel |
| AT28HC256-12JU-070 | 功能描述:IC EEPROM 256KBIT 120NS 32PLCC 制造商:microchip technology 系列:- 包装:剪切带（CT） 零件状态:Digi-Key 停止供應 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:256Kb （32K x 8） 写周期时间 - 字，页:10ms 访问时间:120ns 存储器接口:并联 电压 - 电源:4.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C（TC） 安装类型:表面贴装 封装/外壳:32-LCC（J 形引线） 供应商器件封装:32-PLCC（11.43x13.97） 标准包装:1 |
| AT28HC256-12JU-T | 功能描述:IC EEPROM 256KBIT 120NS 32PLCC 制造商:microchip technology 系列:- 包装:剪切带（CT） 零件状态:在售 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:256Kb （32K x 8） 写周期时间 - 字，页:10ms 访问时间:120ns 存储器接口:并联 电压 - 电源:4.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C（TC） 安装类型:表面贴装 封装/外壳:32-LCC（J 形引线） 供应商器件封装:32-PLCC（11.43x13.97） 标准包装:1 |
| AT28HC256-12LM | 制造商:Atmel Corporation 功能描述:EEPROM, 32K x 8, 32 Pin, Ceramic, LCC |
| AT28HC256-12LM/883 | 功能描述:电可擦除可编程只读存储器 256K 5V SDP - 120NS LCC RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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