参数资料
| 型号： | AT28HC256-12JU |
| 厂商： | Atmel |
| 文件页数： | 3/24页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 256KBIT 120NS 32PLCC |
| 标准包装： | 32 |
| 格式 - 存储器： | EEPROMs - 并行 |
| 存储器类型： | EEPROM |
| 存储容量： | 256K (32K x 8) |
| 速度： | 120ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 32-LCC（J 形引线） |
| 供应商设备封装： | 32-PLCC |
| 包装： | 管件 |
| 产品目录页面： | 1458 (CN2011-ZH PDF) |
AT28HC256
3. Block Diagram
4. Device Operation
4.1
4.2
4.3
4.4
Read
Byte Write
Page Write
DATA Polling
The AT28HC256 is accessed like a Static RAM. When CE and OE are low and WE is high, the
data stored at the memory location determined by the address pins is asserted on the outputs.
The outputs are put in the high impedance state when either CE or OE is high. This dual-line
control gives designers flexibility in preventing bus contention in their system.
A low pulse on the WE or CE input with CE or WE low (respectively) and OE high initiates a
write cycle. The address is latched on the falling edge of CE or WE, whichever occurs last.
The data is latched by the first rising edge of CE or WE. Once a byte write has been started it
will automatically time itself to completion. Once a programming operation has been initiated
and for the duration of t WC , a read operation will effectively be a polling operation.
The page write operation of the AT28HC256 allows 1 to 64 bytes of data to be written into the
device during a single internal programming period. A page write operation is initiated in the
same manner as a byte write; the first byte written can then be followed by 1 to 63 additional
bytes. Each successive byte must be written within 150 μs (t BLC ) of the previous byte. If the
t BLC limit is exceeded the AT28C256 will cease accepting data and commence the internal
programming operation. All bytes during a page write operation must reside on the same page
as defined by the state of the A6 - A14 inputs. That is, for each WE high to low transition dur-
ing the page write operation, A6 - A14 must be the same.
The A0 to A5 inputs are used to specify which bytes within the page are to be written. The
bytes may be loaded in any order and may be altered within the same load period. Only bytes
which are specified for writing will be written; unnecessary cycling of other bytes within the
page does not occur.
The AT28HC256 features DATA Polling to indicate the end of a write cycle. During a byte or
page write cycle an attempted read of the last byte written will result in the complement of the
written data to be presented on I/O7. Once the write cycle has been completed, true data is
valid on all outputs, and the next write cycle may begin. DATA Polling may begin at anytime
during the write cycle.
3
0007N–PEEPR–9/09
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28HC256-12JU SL383 | 制造商:Atmel Corporation 功能描述:EEPROM Parallel 256K-Bit 32K x 8 5V 32-Pin PLCC T/R 制造商:Atmel Corporation 功能描述:EEPROM PARALLEL 256KBIT 32KX8 5V 32PLCC - Tape and Reel |
| AT28HC256-12JU-070 | 功能描述:IC EEPROM 256KBIT 120NS 32PLCC 制造商:microchip technology 系列:- 包装:剪切带（CT） 零件状态:Digi-Key 停止供應 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:256Kb （32K x 8） 写周期时间 - 字，页:10ms 访问时间:120ns 存储器接口:并联 电压 - 电源:4.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C（TC） 安装类型:表面贴装 封装/外壳:32-LCC（J 形引线） 供应商器件封装:32-PLCC（11.43x13.97） 标准包装:1 |
| AT28HC256-12JU-T | 功能描述:IC EEPROM 256KBIT 120NS 32PLCC 制造商:microchip technology 系列:- 包装:剪切带（CT） 零件状态:在售 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:256Kb （32K x 8） 写周期时间 - 字，页:10ms 访问时间:120ns 存储器接口:并联 电压 - 电源:4.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C（TC） 安装类型:表面贴装 封装/外壳:32-LCC（J 形引线） 供应商器件封装:32-PLCC（11.43x13.97） 标准包装:1 |
| AT28HC256-12LM | 制造商:Atmel Corporation 功能描述:EEPROM, 32K x 8, 32 Pin, Ceramic, LCC |
| AT28HC256-12LM/883 | 功能描述:电可擦除可编程只读存储器 256K 5V SDP - 120NS LCC RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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