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参数资料
| 型号： | AT28HC256E-12JI |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 256 32K x 8 High Speed Parallel EEPROMs |
| 中文描述： | 32K X 8 EEPROM 5V, 120 ns, PQCC32 |
| 封装： | PLASTIC, MS-016AE, LCC-32 |
| 文件页数： | 2/16页 |
| 文件大小： | 445K |
| 代理商： | AT28HC256E-12JI |
AT28HC256
2
offers access times to 70 ns with power dissipation of just
440 mW. When the AT28HC256 is deselected, the standby
current is less than 5 mA.
The AT28HC256 is accessed like a Static RAM for the read
or write cycle without the need for external components.
The device contains a 64-byte page register to allow writing
of up to 64 bytes simultaneously. During a write cycle, the
address and 1 to 64 bytes of data are internally latched,
freeing the addresses and data bus for other operations.
Following the initiation of a write cycle, the device will auto-
matically write the latched data using an internal control
timer. The end of a write cycle can be detected by DATA
polling of I/O
7
. Once the end of a write cycle has been
detected a new access for a read or write can begin.
Atmel’s 28HC256 has additional features to ensure high
quality and manufacturability. The device utilizes internal
error correction for extended endurance and improved data
retention characteristics. An optional software data protec-
tion mechanism is available to guard against inadvertent
writes. The device also includes an extra 64 bytes of
EEPROM for device identification or tracking.
Block Diagram
Absolute Maximum Ratings*
Temperature Under Bias................................ -55°C to +125°C
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
Storage Temperature..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground.............................-0.6V to V
CC
+ 0.6V
Voltage on OE and A9
with Respect to Ground...................................-0.6V to +13.5V
相关PDF资料 |
PDF描述 |
|---|---|
| AT28HC256-70 | CONNECTOR ACCESSORY |
| AT28HC64B-12SC | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28HC64B-12SI | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28HC64B-70 | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28HC64B-90 | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28HC256E-12JU | 功能描述:电可擦除可编程只读存储器 Parallel 电可擦除可编程只读存储器 5V-120NS, 883c, GR RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28HC256E-12JU-070 | 功能描述:IC EEPROM 256KBIT 120NS 32PLCC 制造商:microchip technology 系列:- 包装:剪切带（CT） 零件状态:在售 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:256Kb （32K x 8） 写周期时间 - 字，页:10ms 访问时间:120ns 存储器接口:并联 电压 - 电源:4.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C（TC） 安装类型:表面贴装 封装/外壳:32-LCC（J 形引线） 供应商器件封装:32-PLCC 标准包装:1 |
| AT28HC256E-12JU-T | 功能描述:120NS, PLCC, IND TEMP, GREEN 制造商:microchip technology 系列:- 包装:剪切带（CT） 零件状态:在售 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:256Kb （32K x 8） 写周期时间 - 字，页:10ms 访问时间:120ns 存储器接口:并联 电压 - 电源:4.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C（TC） 安装类型:表面贴装 封装/外壳:32-LCC（J 形引线） 供应商器件封装:32-PLCC 标准包装:1 |
| AT28HC256E-12LM/883 | 功能描述:电可擦除可编程只读存储器 256K HI-ENDURANCE SDP - 120NS RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28HC256E12LM883 | 制造商:Adesto Technologies Corporation 功能描述: |
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