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参数资料
| 型号： | AT28HC64B-12SI |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| 中文描述： | 8K X 8 EEPROM 5V, 120 ns, PDSO28 |
| 封装： | 0.300 INCH, PLASTIC, MS-013, SOIC-28 |
| 文件页数： | 1/12页 |
| 文件大小： | 661K |
| 代理商： | AT28HC64B-12SI |
AT28HC64B
64K (8K x 8)
High Speed
CMOS
E
2
PROM with
Page Write and
Software Data
Protection
Features
Fast Read Access Time - 55 ns
Automatic Page Write Operation
Internal Address and Data Latches for 64-Bytes
Fast Write Cycle Times
Page Write Cycle Time: 10 ms Maximum
1 to 64-Byte Page Write Operation
Low Power Dissipation
40 mA Active Current
100
μ
A CMOS Standby Current
Hardware and Software Data Protection
DATA Polling and Toggle Bit for End of Write Detection
High Reliability CMOS Technology
Endurance: 100,000 Cycles
Data Retention: 10 Years
Single 5V
±
10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-Wide Pinout
Commercial and Industrial Temperature Ranges
Note: PLCC package pins 1 and
17 are DON’T CONNECT.
PDIP, SOIC
Top View
PLCC
Top View
Pin Name
Function
A0 - A12
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
DC
Don’t Connect
Pin Configurations
TSOP
Top View
Description
The AT28HC64B is a high-performance electrically erasable and programmable read
only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 55 ns with power dissipation of just 220 mW. When the device is
deselected, the CMOS standby current is less than 100
μ
A.
The AT28HC64B is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
(continued)
0274D
AT28HC64B
2-267
相关PDF资料 |
PDF描述 |
|---|---|
| AT28HC64B-70 | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28HC64B-90 | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28HC64B-70TI | High Speed CMOS Logic Dual Binary Up-Counters 16-SOIC -55 to 125 |
| AT28HC64B-90JC | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28HC64B-90JI | High Speed CMOS Logic Dual Retriggerable Precision Monostable Multivibrators 16-PDIP -55 to 125 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28HC64B-12SI-SL883 | 制造商:Atmel Corporation 功能描述:120NS SOIC IND TEMP |
| AT28HC64B-12SU | 功能描述:电可擦除可编程只读存储器 1M 5V SDP - 120NS IND TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28HC64B-12SU SL383 | 制造商:Atmel Corporation 功能描述:EEPROM PARALLEL 64KBIT 8KX8 5V 28SOIC - Tape and Reel |
| AT28HC64B-12SU-T | 功能描述:120NS, SOIC, IND TEMP, GREEN 制造商:microchip technology 系列:- 包装:剪切带（CT） 零件状态:在售 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:64Kb （8K x 8） 写周期时间 - 字，页:10ms 访问时间:120ns 存储器接口:并联 电压 - 电源:4.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C（TC） 安装类型:表面贴装 封装/外壳:28-SOIC（0.295"，7.50mm 宽） 供应商器件封装:28-SOIC 标准包装:1 |
| AT28HC64B-12TA | 功能描述:IC EEPROM 64KBIT 120NS 28TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
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