参数资料
型号: AT28LV010-20JI
厂商: ATMEL CORP
元件分类: DRAM
英文描述: 64K 8K x 8 Battery-Voltage CMOS E2PROM
中文描述: 128K X 8 EEPROM 3V, 200 ns, PQCC32
封装: PLASTIC, MS-016AE, LCC-32
文件页数: 1/9页
文件大小: 498K
代理商: AT28LV010-20JI
AT28LV010
1 Megabit
(128K x 8)
Low Voltage
Paged CMOS
E
2
PROM
Features
Single 3.3V
±
10% Supply
Fast Read Access Time - 200 ns
Automatic Page Write Operation
Internal Address and Data Latches for 128-Bytes
Internal Control Timer
Fast Write Cycle Time
Page Write Cycle Time - 10 ms Maximum
1 to 128-Byte Page Write Operation
Low Power Dissipation
15 mA Active Current
20
μ
A CMOS Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
Endurance: 100,000K Cycles
Data Retention: 10 Years
JEDEC Approved Byte-Wide Pinout
Commercial and Industrial Temperature Ranges
Description
The AT28LV010 is a high-performance 3-volt only Electrically Erasable and Program-
mable Read Only Memory. Its 1 megabit of memory is organized as 131,072 words
by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the
device offers access times to 200 ns with power dissipation of just 54 mW. When the
device is deselected, the CMOS standby current is less than 20
μ
A.
Pin Configurations
(continued)
PDIP
Top View
Pin Name
Function
A0 - A16
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data
Inputs/Outputs
NC
No Connect
DC
Don’t Connect
TSOP
Top View
PLCC
Top View
0395A
AT28LV010
2-155
相关PDF资料
PDF描述
AT28LV010-20PC 64K 8K x 8 Battery-Voltage CMOS E2PROM
AT28LV010-20PI 64K 8K x 8 Battery-Voltage CMOS E2PROM
AT28LV010-20TC 64K 8K x 8 Battery-Voltage CMOS E2PROM
AT28LV010-20TI 64K 8K x 8 Battery-Voltage CMOS E2PROM
AT28LV010-25 64K 8K x 8 Battery-Voltage CMOS E2PROM
相关代理商/技术参数
参数描述
AT28LV010-20JU 功能描述:电可擦除可编程只读存储器 1M 3V SDP - 200NS IND TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
AT28LV010-20JU SL319 制造商:Atmel Corporation 功能描述:PARALLEL EEPROM, 1M (128K X 8), 3V, SDP - 200NS, PLCC, IND T - Tape and Reel
AT28LV010-20JU SL383 制造商:Atmel Corporation 功能描述:EEPROM Parallel 1M-bit 128K x 8 3.3V 32-Pin PLCC T/R 制造商:Atmel Corporation 功能描述:EEPROM PARALLEL 1MBIT 128KX8 3.3V 32PLCC - Tape and Reel 制造商:Atmel 功能描述:EEPROM Parallel 1M-bit 128K x 8 3.3V 32-Pin PLCC T/R
AT28LV010-20JU-051 功能描述:IC EEPROM 1MBIT 200NS 32PLCC 制造商:microchip technology 系列:- 包装:管件 零件状态:在售 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:1Mb (128K x 8) 写周期时间 - 字,页:10ms 访问时间:200ns 存储器接口:并联 电压 - 电源:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C(TC) 安装类型:表面贴装 封装/外壳:32-LCC(J 形引线) 供应商器件封装:32-PLCC 标准包装:32
AT28LV010-20JU-235 功能描述:IC EEPROM 1MBIT 200NS 32PLCC 制造商:microchip technology 系列:- 包装:剪切带(CT) 零件状态:在售 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:1Mb (128K x 8) 写周期时间 - 字,页:10ms 访问时间:200ns 存储器接口:并联 电压 - 电源:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C(TC) 安装类型:表面贴装 封装/外壳:32-LCC(J 形引线) 供应商器件封装:32-PLCC 标准包装:1