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参数资料
| 型号： | AT29C040A |
| 厂商： | Atmel Corp. |
| 英文描述： | 512K x 8 5-volt Only 256-Byte Sector Flash Memory(512K x 8 5V 256字节扇区闪速存储器) |
| 中文描述： | 为512k × 8 5伏只有256字节的扇区闪存（为512k × 8 5V的256字节扇区闪速存储器） |
| 文件页数： | 1/16页 |
| 文件大小： | 152K |
| 代理商： | AT29C040A |
1
Features
Fast Read Access Time - 120 ns
5-Volt Only Reprogramming
Sector Program Operation
– Single Cycle Reprogram (Erase and Program)
– 2048 Sectors (256 bytes/sector)
– Internal Address and Data Latches for 256 Bytes
Internal Program Control and Timer
Hardware and Software Data Protection
Two 16K Bytes Boot Blocks with Lockout
Fast Sector Program Cycle Time - 10 ms
DATA Polling for End of Program Detection
Low Power Dissipation
– 40 mA Active Current
– 100 μA CMOS Standby Current
Typical Endurance > 10,000 Cycles
Single 5V
±
10% Supply
CMOS and TTL Compatible Inputs and Outputs
Description
The AT29C040A is a 5-volt only in-system Flash Programmable and Erasable Read
Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,
the device offers access times up to 120 ns, and a low 220 mW power dissipation.
When the device is deselected, the CMOS standby current is less than 100
μ
A. The
device endurance is such that any sector can typically be written to in excess of
10,000 times. The programming algorithm is compatible with other devices in Atmel’s
5-volt only Flash family.
Pin Configurations
4-Megabit
(512K x 8)
5-volt Only
256-Byte Sector
Flash Memory
AT29C040A
Rev. 0333F–10/98
Pin Name
Function
A0 - A18
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
TSOP Top View
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
A17
WE
VCC
A18
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
DIP Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A18
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
A17
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
(continued)
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| AT29C1024-70 | 1 Megabit 64K x 16 5-volt Only CMOS Flash Memory |
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| AT29C1024-12 | 1 Megabit 64K x 16 5-volt Only CMOS Flash Memory |
| AT29C1024-12JC | 1 Megabit 64K x 16 5-volt Only CMOS Flash Memory |
| AT29C1024-12JI | 1 Megabit 64K x 16 5-volt Only CMOS Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT29C040A_08 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:4-megabit (512K x 8) 5-volt Only 256-byte Sector Flash Memory |
| AT29C040A-10 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory |
| AT29C040A-10PC | 功能描述:IC FLASH 4MBIT 100NS 32DIP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:32 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:1M (128K x 8) 速度:120ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:32-LCC（J 形引线） 供应商设备封装:32-PLCC 包装:管件 其它名称:AT49BV00112JC |
| AT29C040A-10PI | 功能描述:IC FLASH 4MBIT 100NS 32DIP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:32 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:1M (128K x 8) 速度:120ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:32-LCC（J 形引线） 供应商设备封装:32-PLCC 包装:管件 其它名称:AT49BV00112JC |
| AT29C040A-10TC | 功能描述:闪存 4M bit RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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