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参数资料
| 型号： | AT45DB041D-MU |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 4-megabit 2.5-volt or 2.7-volt DataFlash |
| 中文描述： | 4M X 1 FLASH 2.7V PROM, DSO8 |
| 封装： | 6 X 5 MM, 0.60 MM HEIGHT, GREEN, PLASTIC, MO-229, MLF-8 |
| 文件页数： | 7/53页 |
| 文件大小： | 1085K |
| 代理商： | AT45DB041D-MU |
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7
3595H–DFLASH–03/07
AT45DB041D
memory is reached, the device will continue reading back at the beginning of the same page. A
low-to-high transition on the CS pin will terminate the read operation and tri-state the output pin
(SO). The maximum SCK frequency allowable for the Main Memory Page Read is defined by the
f
SCK
specification. The Main Memory Page Read bypasses both data buffers and leaves the
contents of the buffers unchanged.
6.5
Buffer Read
The SRAM data buffers can be accessed independently from the main memory array, and utiliz-
ing the Buffer Read Command allows data to be sequentially read directly from the buffers. Four
opcodes, D4H or D1H for buffer 1 and D6H or D3H for buffer 2 can be used for the Buffer Read
Command. The use of each opcode depends on the maximum SCK frequency that will be used
to read data from the buffer. The D4H and D6H opcode can be used at any SCK frequency up to
the maximum specified by f
CAR1
. The D1H and D3H opcode can be used for lower frequency
read operations up to the maximum specified by f
CAR2
.
To perform a buffer read from the DataFlash standard buffer (264 bytes), the opcode must be
clocked into the device followed by three address bytes comprised of 15 don’t care bits and
9 buffer address bits (BFA8 - BFA0). To perform a buffer read from the binary buffer (256 bytes),
the opcode must be clocked into the device followed by three address bytes comprised of
16 don’t care bits and 8 buffer address bits (BFA7 - BFA0). Following the address bytes, one
don’t care byte must be clocked in to initialize the read operation. The CS pin must remain low
during the loading of the opcode, the address bytes, the don’t care bytes, and the reading of
data. When the end of a buffer is reached, the device will continue reading back at the beginning
of the buffer. A low-to-high transition on the CS pin will terminate the read operation and tri-state
the output pin (SO).
7.
Program and Erase Commands
7.1
Buffer Write
Data can be clocked in from the input pin (SI) into either buffer 1 or buffer 2. To load data into the
DataFlash standard buffer (264 bytes), a 1-byte opcode, 84H for buffer 1 or 87H for buffer 2,
must be clocked into the device, followed by three address bytes comprised of 15 don’t care bits
and 9 buffer address bits (BFA8 - BFA0). The 9 buffer address bits specify the first byte in the
buffer to be written. To load data into the binary buffers (256 bytes each), a 1-byte opcode 84H
for buffer 1 or 87H for buffer 2, must be clocked into the device, followed by three address bytes
comprised of 16 don’t care bits and 8 buffer address bits (BFA7 - BFA0). The 8 buffer address
bits specify the first byte in the buffer to be written. After the last address byte has been clocked
into the device, data can then be clocked in on subsequent clock cycles. If the end of the data
buffer is reached, the device will wrap around back to the beginning of the buffer. Data will con-
tinue to be loaded into the buffer until a low-to-high transition is detected on the CS pin.
7.2
Buffer to Main Memory Page Program with Built-in Erase
Data written into either buffer 1 or buffer 2 can be programmed into the main memory. A 1-byte
opcode, 83H for buffer 1 or 86H for buffer 2, must be clocked into the device. For the DataFlash
standard page size (264 bytes), the opcode must be followed by three address bytes consist of
4 don’t care bits, 11 page address bits (PA10 - PA0) that specify the page in the main memory to
be written and 9 don’t care bits. To perform a buffer to main memory page program with built-in
erase for the binary page size (256 bytes), the opcode 83H for buffer 1 or 86H for buffer 2, must
be clocked into the device followed by three address bytes consisting of 5 don’t care bits
相关PDF资料 |
PDF描述 |
|---|---|
| AT45DB041D-MU-2.5 | 4-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB041D-SSU | 4-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB041D-SSU-2.5 | 4-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB041D-SU | 4-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB041D-SU-2.5 | 4-megabit 2.5-volt or 2.7-volt DataFlash |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT45DB041D-MU-2.5 | 功能描述:闪存 4MB SERIAL 2.5V - IND TEMP RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT45DB041D-MU-2.5-SL383 | 制造商:Adesto Technologies Corporation 功能描述:8-VDFN (5X6), IND TEMP, 2.5V, T&R - Tape and Reel 制造商:Adesto Technologies Corporation 功能描述:IC FLASH 4MBIT 50MHZ 8VDFN 制造商:Adesto Technologies Corporation 功能描述:Flash 4M, 66MHz 2.5-3.6V DataFlash |
| AT45DB041D-MUHT-T | 制造商:Adesto Technologies Corporation 功能描述:8-UDFN (5X6), EXT TEMP NON-AECQ 2.7V T&R - Tape and Reel |
| AT45DB041D-MU-SL383 | 制造商:Adesto Technologies Corporation 功能描述:8-VDFN (5X6), IND TEMP, 2.7V, T&R - Tape and Reel 制造商:Adesto Technologies Corporation 功能描述:IC FLASH 4MBIT 66MHZ 8VDFN 制造商:Adesto Technologies Corporation 功能描述:Flash 4M, 66MHz 2.7-3.6V DataFlash |
| AT45DB041D-MU-SL954 | 制造商:Adesto Technologies Corporation 功能描述:IC FLASH 4MBIT 66MHZ 8VDFN |
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