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参数资料
| 型号： | AT45DB081D-SSU-2.5 |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 8-megabit 2.5-volt or 2.7-volt DataFlash |
| 中文描述： | 8M X 1 FLASH 2.7V PROM, PDSO8 |
| 封装： | 0.150 INCH, GREEN, PLASTIC, MS-012AA, SOIC-8 |
| 文件页数： | 10/53页 |
| 文件大小： | 1105K |
| 代理商： | AT45DB081D-SSU-2.5 |
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10
3596E–DFLASH–02/07
AT45DB081D
7.6
Sector Erase
The Sector Erase command can be used to individually erase any sector in the main memory.
There are 16 sectors and only one sector can be erased at one time. To perform sector 0a or
sector 0b erase for the DataFlash standard page size (264 bytes), an opcode of 7CH must be
loaded into the device, followed by three address bytes comprised of 3 don’t care bits, 9 page
address bits (PA11 - PA3) and 12 don’t care bits. To perform a sector 1-15 erase, the
opcode 7CH must be loaded into the device, followed by three address bytes comprised of
3 don’t care bits, 4 page address bits (PA11 - PA8) and 17 don’t care bits. To perform sector 0a
or sector 0b erase for the binary page size (256 bytes), an opcode of 7CH must be loaded into
the device, followed by three address bytes comprised of 4 don’t care bit and 9 page address
bits (A19 - A11) and 11 don’t care bits. To perform a sector 1-15 erase, the opcode 7CH must be
loaded into the device, followed by three address bytes comprised of 4 don’t care bit and 4 page
address bits (A19 - A16) and 16 don’t care bits. The page address bits are used to specify any
valid address location within the sector which is to be erased.
W
hen a low-to-high transition
occurs on the CS pin, the part will erase the selected sector. The erase operation is internally
self-timed and should take place in a maximum time of t
SE
. During this time, the status register
will indicate that the part is busy.
7.7
Chip Erase
The entire main memory can be erased at one time by using the Chip Erase command.
To execute the Chip Erase command, a 4-byte command sequence C7H, 94H, 80H and 9AH
must be clocked into the device. Since the entire memory array is to be erased, no address
bytes need to be clocked into the device, and any data clocked in after the opcode will be
ignored. After the last bit of the opcode sequence has been clocked in, the CS pin can be deas-
serted to start the erase process. The erase operation is internally self-timed and should take
place in a time of t
CE
. During this time, the Status Register will indicate that the device is busy.
The Chip Erase command will not affect sectors that are protected or locked down; the contents
of those sectors will remain unchanged. Only those sectors that are not protected or locked
down will be erased.
Table 7-2.
Sector Erase Addressing
PA11/
A19
PA10/
A18
PA9/
A17
PA8/
A16
PA7/
A15
PA6/
A14
PA5/
A13
PA4/
A12
PA3/
A11
PA2/
A10
PA1/
A9
PA0/
A8
Sector
0
0
0
0
0
0
0
0
0
X
X
X
0a
0
0
0
0
0
0
0
0
1
X
X
X
0b
0
0
0
1
X
X
X
X
X
X
X
X
1
0
0
1
0
X
X
X
X
X
X
X
X
2
1
1
0
0
X
X
X
X
X
X
X
X
12
1
1
0
1
X
X
X
X
X
X
X
X
13
1
1
1
0
X
X
X
X
X
X
X
X
14
1
1
1
1
X
X
X
X
X
X
X
X
15
相关PDF资料 |
PDF描述 |
|---|---|
| AT45DB081D-SU | 8-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB081D-SU-2.5 | 8-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB081 | 8-Megabit 2.7-volt Only Serial DataFlash |
| AT45DB081-RC | 8-Megabit 2.7-volt Only Serial DataFlash |
| AT45DB081-RI | 8-Megabit 2.7-volt Only Serial DataFlash |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT45DB081D-SSU-SL383 | 制造商:Adesto Technologies Corporation 功能描述:8-SOIC-N, IND TEMP, 2.7V, T&R 制造商:Adesto Technologies Corporation 功能描述:8-SOIC-N, IND TEMP, 2.7V, T&R - Tape and Reel 制造商:Adesto Technologies Corporation 功能描述:IC FLASH 8MBIT 66MHZ 8SOIC 制造商:Adesto Technologies Corporation 功能描述:Flash 8M, 66MHz 2.7-3.6V DataFlash |
| AT45DB081D-SSU-SL954 | 制造商:Adesto Technologies Corporation 功能描述:IC FLASH 8MBIT 66MHZ 8SOIC |
| AT45DB081D-SSU-SL955 | 制造商:Adesto Technologies 功能描述:Flash Serial-SPI 3V/3.3V 8Mbit 6ns 8-Pin SOIC T/R 制造商:Adesto Technologies 功能描述:Res Thin Film 0805 365 Ohm 0.1% 1/8W ±25ppm/°C Molded SMD Punched Carrier T/R |
| AT45DB081D-SU | 功能描述:闪存 8MB Serial Ind. Temp RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT45DB081D-SU SL383 | 制造商:Adesto Technologies 功能描述:Res Thin Film NET 60K Ohm/120K Ohm 0.5% 1/8W ±100ppm/°C SER Molded 6-Pin 0303 SMD 制造商:Adesto Technologies Corporation 功能描述:DATAFLASH, 8M, SERIAL, 2.7V - IND TEMP, GREEN 8 LEAD SOIC - Tape and Reel |
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