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参数资料
| 型号： | AT45DB081D-SSU-2.5 |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 8-megabit 2.5-volt or 2.7-volt DataFlash |
| 中文描述： | 8M X 1 FLASH 2.7V PROM, PDSO8 |
| 封装： | 0.150 INCH, GREEN, PLASTIC, MS-012AA, SOIC-8 |
| 文件页数： | 8/53页 |
| 文件大小： | 1105K |
| 代理商： | AT45DB081D-SSU-2.5 |
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8
3596E–DFLASH–02/07
AT45DB081D
7.
Program and Erase Commands
7.1
Buffer Write
Data can be clocked in from the input pin (SI) into either buffer 1 or buffer 2. To load data into the
standard DataFlash buffer (264 bytes), a 1-byte opcode, 84H for buffer 1 or 87H for buffer 2,
must be clocked into the device, followed by three address bytes comprised of 15 don’t care bits
and 9 buffer address bits (BFA8 - BFA0). The 9 buffer address bits specify the first byte in the
buffer to be written. To load data into the binary buffers (256 bytes each), a 1-byte opcode 84H
for buffer 1 or 87H for buffer 2, must be clocked into the device, followed by three address bytes
comprised of 16 don’t care bits and 8 buffer address bits (BFA7 - BFA0). The 8 buffer address
bits specify the first byte in the buffer to be written. After the last address byte has been clocked
into the device, data can then be clocked in on subsequent clock cycles. If the end of the data
buffer is reached, the device will wrap around back to the beginning of the buffer. Data will con-
tinue to be loaded into the buffer until a low-to-high transition is detected on the CS pin.
7.2
Buffer to Main Memory Page Program with Built-in Erase
Data written into either buffer 1 or buffer 2 can be programmed into the main memory. A 1-byte
opcode, 83H for buffer 1 or 86H for buffer 2, must be clocked into the device. For the DataFlash
standard page size (264 bytes), the opcode must be followed by three address bytes consist of
3 don’t care bits, 12 page address bits (PA11 - PA0) that specify the page in the main memory to
be written and 9 don’t care bits. To perform a buffer to main memory page program with built-in
erase for the binary page size (256 bytes), the opcode 83H for buffer 1 or 86H for buffer 2, must
be clocked into the device followed by three address bytes consisting of 4 don’t care bits
12 page address bits (A19 - A8) that specify the page in the main memory to be written and
8 don’t care bits.
W
hen a low-to-high transition occurs on the CS pin, the part will first erase the
selected page in main memory (the erased state is a logic 1) and then program the data stored
in the buffer into the specified page in main memory. Both the erase and the programming of the
page are internally self-timed and should take place in a maximum time of t
EP
. During this time,
the status register will indicate that the part is busy.
7.3
Buffer to Main Memory Page Program without Built-in Erase
A previously-erased page within main memory can be programmed with the contents of either
buffer 1 or buffer 2. A 1-byte opcode, 88H for buffer 1 or 89H for buffer 2, must be clocked into
the device. For the DataFlash standard page size (264 bytes), the opcode must be followed by
three address bytes consist of 3 don’t care bits, 12 page address bits (PA11 - PA0) that specify
the page in the main memory to be written and 9 don’t care bits. To perform a buffer to main
memory page program without built-in erase for the binary page size (256 bytes), the opcode
88H for buffer 1 or 89H for buffer 2, must be clocked into the device followed by three address
bytes consisting of 4 don’t care bits, 12 page address bits (A19 - A8) that specify the page in the
main memory to be written and 8 don’t care bits.
W
hen a low-to-high transition occurs on the CS
pin, the part will program the data stored in the buffer into the specified page in the main mem-
ory. It is necessary that the page in main memory that is being programmed has been previously
erased using one of the erase commands (Page Erase or Block Erase). The programming of the
page is internally self-timed and should take place in a maximum time of t
P
. During this time, the
status register will indicate that the part is busy.
相关PDF资料 |
PDF描述 |
|---|---|
| AT45DB081D-SU | 8-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB081D-SU-2.5 | 8-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB081 | 8-Megabit 2.7-volt Only Serial DataFlash |
| AT45DB081-RC | 8-Megabit 2.7-volt Only Serial DataFlash |
| AT45DB081-RI | 8-Megabit 2.7-volt Only Serial DataFlash |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT45DB081D-SSU-SL383 | 制造商:Adesto Technologies Corporation 功能描述:8-SOIC-N, IND TEMP, 2.7V, T&R 制造商:Adesto Technologies Corporation 功能描述:8-SOIC-N, IND TEMP, 2.7V, T&R - Tape and Reel 制造商:Adesto Technologies Corporation 功能描述:IC FLASH 8MBIT 66MHZ 8SOIC 制造商:Adesto Technologies Corporation 功能描述:Flash 8M, 66MHz 2.7-3.6V DataFlash |
| AT45DB081D-SSU-SL954 | 制造商:Adesto Technologies Corporation 功能描述:IC FLASH 8MBIT 66MHZ 8SOIC |
| AT45DB081D-SSU-SL955 | 制造商:Adesto Technologies 功能描述:Flash Serial-SPI 3V/3.3V 8Mbit 6ns 8-Pin SOIC T/R 制造商:Adesto Technologies 功能描述:Res Thin Film 0805 365 Ohm 0.1% 1/8W ±25ppm/°C Molded SMD Punched Carrier T/R |
| AT45DB081D-SU | 功能描述:闪存 8MB Serial Ind. Temp RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT45DB081D-SU SL383 | 制造商:Adesto Technologies 功能描述:Res Thin Film NET 60K Ohm/120K Ohm 0.5% 1/8W ±100ppm/°C SER Molded 6-Pin 0303 SMD 制造商:Adesto Technologies Corporation 功能描述:DATAFLASH, 8M, SERIAL, 2.7V - IND TEMP, GREEN 8 LEAD SOIC - Tape and Reel |
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