参数资料
型号: AT49BV002N-12VI
厂商: ATMEL CORP
元件分类: DRAM
英文描述: 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
中文描述: 256K X 8 FLASH 2.7V PROM, 120 ns, PDSO32
封装: 8 X 14 MM, VSOP-32
文件页数: 9/20页
文件大小: 171K
代理商: AT49BV002N-12VI
AT49BV/LV002(N)(T)
9
Program Cycle Waveforms
Sector or Chip Erase Cycle Waveforms
Notes:
1.
2.
OE must be high only when WE and CE are both low.
For chip erase, the address should be 5555. For sector erase, the address depends on what sector is to be erased.
(See note 4 under command definitions.)
For chip erase, the data should be 10H, and for sector erase, the data should be 30H.
3.
Program Cycle Characteristics
Symbol
Parameter
Min
Typ
Max
Units
t
BP
Byte Programming Time
30
50
μ
s
t
AS
Address Set-up Time
0
ns
t
AH
Address Hold Time
70
ns
t
DS
Data Set-up Time
70
ns
t
DH
Data Hold Time
0
ns
t
WP
Write Pulse Width
90
ns
t
WPH
Write Pulse Width High
90
ns
t
EC
Erase Cycle Time
10
seconds
A0 - A17
OE
(1)
AA
80
Note 3
55
55
5555
5555
Note 2
AA
BYTE 0
BYTE 1
BYTE 2
BYTE 3
BYTE 4
BYTE 5
2AAA
2AAA
t
WPH
t
WP
CE
WE
A0 - A17
DATA
t
AS
t
AH
t
EC
t
DH
t
DS
5555
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