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参数资料
| 型号： | AT49BV1604T-90UC |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory |
| 中文描述： | 1M X 16 FLASH 3V PROM, 90 ns, PBGA48 |
| 封装： | MICRO, BGA-48 |
| 文件页数： | 1/18页 |
| 文件大小： | 214K |
| 代理商： | AT49BV1604T-90UC |
1
Features
2.7V to 3.6V Read/Write
Access Time - 90 ns
Sector Erase Architecture
– Thirty 32K word (64K byte) Sectors with Individual Write Lockout
– Eight 4K word (8K byte) Sectors with Individual Write Lockout
– Two 16K word (32K byte) Sectors with Individual Write Lockout
Fast Word Program Time - 20
μ
s
Fast Sector Erase Time - 200 ms
Dual Plane Organization, Permitting Concurrent Read while Program/Erase
– Memory Plane A: Eight 4K Word, Two 16K Word and Six 32K Word Sectors
– Memory Plane B: Twenty-Four 32K Word Sectors
Erase Suspend Capability
– Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
Low Power Operation
– 25 mA Active
– 10
μ
A Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
Optional V
PP
Pin for Fast Programming
RESET Input for Device Initialization
Sector Program Unlock Command
TSOP, CBGA, and
μ
BGA Package Options
Top or Bottom Boot Block Configuration Available
Description
The AT49BV16X4(T) is 2.7 to 3.6 volt 16-megabit Flash memory organized as
1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data
appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided
into 40 blocks for erase operations. The device is offered in 48-pin TSOP and 48-ball
μ
BGA packages. The device has CE, and OE control signals to avoid any bus con-
tention. This device can be read or reprogrammed using a single 2.7V power supply,
making it ideally suited for in-system programming.
Rev. 0925B–05/98
AT49BV1604
16-Megabit
(1M x 16/2M x 8)
3-volt Only
Flash Memory
AT49BV1604
AT49BV1604T
AT49BV1614
AT49BV1614T
Advance
Information
AT49BV16X4(T)
Pin Configurations
Pin Name
Function
A0 - A19
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
RESET
Reset
RDY/BUSY
READY/BUSY Output
V
PP
Optional Power Supply for Faster
Program/Erase Operations
I/O0 - I/O14
Data Inputs/Outputs
I/O15 (A-1)
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
BYTE
Selects Byte or Word Mode
NC
No Connect
V
CCQ
Output Power Supply
DC
Don’t Connect
(continued)
相关PDF资料 |
PDF描述 |
|---|---|
| AT49BV1604T-90UI | 16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory |
| AT49BV1614 | 16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory |
| AT49BV1614-12CC | 16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory |
| AT49BV1614-12CI | DC-DC Converter, 15Watt, Input VDC: 36~75, Output VDC: 3.3, MaxOutput Current(A): 4, Package: 2x1, Isolation(VDC): 1500, Operating Temp. -40??C to +75??C, Low Ripple & Noise, High Efficiency up to 88%, Low Profile Metal Package, Continuous Auto-Recovery, Single & Dual Ouput Regulated |
| AT49BV1614-12TC | 16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT49BV1604T-90UI | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory |
| AT49BV160-70CI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|45PIN|PLASTIC |
| AT49BV160-70TI | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory |
| AT49BV160-90CI | 功能描述:闪存 16M bit RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49BV160-90TI | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory |
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