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参数资料
| 型号： | AT49BV1604T-90UC |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory |
| 中文描述： | 1M X 16 FLASH 3V PROM, 90 ns, PBGA48 |
| 封装： | MICRO, BGA-48 |
| 文件页数： | 3/18页 |
| 文件大小： | 214K |
| 代理商： | AT49BV1604T-90UC |
AT49BV16X4(T)
3
A six byte command (bypass unlock) sequence to remove
the requirement of entering the three byte program
sequence is offered to further improve programming time.
After entering the six byte code, only single pulses on the
write control lines are required for writing into the device.
This mode (single pulse byte/word program) is exited by
powering down the device, or by pulsing the RESET pin
low and then bringing it back to V
CC
. Erase and Erase Sus-
pend/Resume commands will not work while in this mode;
if entered they will result in data being programmed into the
device. It is not recommended that the six byte code reside
in the software of the final product but only exist in external
programming code.
The BYTE pin controls whether the device data I/O pins
operate in the byte or word configuration. If the BYTE pin is
set at logic “1”, the device is in word configuration, I/O0-
I/O15 are active and controlled by CE and OE.
If the BYTE pin is set at logic “0”, the device is in byte con-
figuration, and only data I/O pins I/O0-I/O7 are active and
controlled by CE and OE. The data I/O pins I/O8-I/O14 are
tri-stated, and the I/O15 pin is used as an input for the LSB
(A-1) address function.
Block Diagram
Device Operation
READ:
The AT49BV16X4(T) is accessed like an EPROM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins are
asserted on the outputs. The outputs are put in the high
impedance state whenever CE or OE is high. This dual-line
control gives designers flexibility in preventing bus conten-
tion.
COMMAND SEQUENCES:
When the device is first pow-
ered on it will be reset to the read or standby mode
depending upon the state of the control line inputs. In order
to perform other device functions, a series of command
sequences are entered into the device. The command
sequences are shown in the Command Definitions table
(I/O8 - I/O15 are don't care inputs for the command codes).
The command sequences are written by applying a low
pulse on the WE or CE input with CE or WE low (respec-
tively) and OE high. The address is latched on the falling
edge of CE or WE, whichever occurs last. The data is
latched by the first rising edge of CE or WE. Standard
microprocessor write timings are used. The address loca-
tions used in the command sequences are not affected by
entering the command sequences.
IDENTIFIER
REGISTER
STATUS
REGISTER
DATA
COMPARATOR
O
M
OUTPUT
BUFFER
INPUT
BUFFER
COMMAND
REGISTER
D
R
Y-GATING
WRITE STATE
MACHINE
PROGRAM/ERASE
VOLTAGE SWITCH
CE
WE
OE
RESET
BYTE
RDY/BUSY
VPP
VCC
GND
Y-DECODER
X-DECODER
INPUT
BUFFER
ADDRESS
LATCH
I/O0 - I/O15/A-1
A0 - A19
PLANE B
SECTORS
PLANE A SECTORS
相关PDF资料 |
PDF描述 |
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| AT49BV1604T-90UI | 16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory |
| AT49BV1614 | 16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory |
| AT49BV1614-12CC | 16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AT49BV1604T-90UI | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory |
| AT49BV160-70CI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|45PIN|PLASTIC |
| AT49BV160-70TI | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory |
| AT49BV160-90CI | 功能描述:闪存 16M bit RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49BV160-90TI | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory |
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