参数资料
型号: AT49BV802A
厂商: Atmel Corp.
英文描述: 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory
中文描述: 8兆位(为512k × 16 / 1米× 8)3伏,只有闪存
文件页数: 1/29页
文件大小: 253K
代理商: AT49BV802A
1
Features
Single Voltage Read/Write Operation: 2.65V to 3.6V
Access Time – 70 ns
Sector Erase Architecture
– Fifteen 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
Fast Byte/Word Program Time – 12 μs
Fast Sector Erase Time – 300 ms
Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming from Any Sector by Suspending Erase
of a Different Sector
– Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending
Programming of Any Other Byte/Word
Low-power Operation
– 12 mA Active
– 13 μA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
RESET Input for Device Initialization
Sector Lockdown Support
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Minimum 100,000 Erase Cycles
Common Flash Interface (CFI)
Description
The AT49BV802A(T) is a 2.7-volt 8-megabit Flash memory organized as 524,288
words of 16 bits each or 1,048,576 bytes of 8 bits each. The x16 data appears on I/O0
- I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 23 sectors for
erase operations. The AT49BV802A(T) is offered in a 48-lead TSOP and a 48-ball
CBGA package. The device has CE and OE control signals to avoid any bus conten-
tion. This device can be read or reprogrammed using a single power supply, making it
ideally suited for in-system programming.
Pin Configurations
Pin Name
Function
A0 - A18
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
RESET
Reset
RDY/BUSY
READY/BUSY Output
I/O0 - I/O14
Data Inputs/Outputs
I/O15 (A-1)
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
BYTE
Selects Byte or Word Mode
NC
No Connect
8-megabit
(512K x 16/
1M x 8)
3-volt Only
Flash Memory
AT49BV802A
AT49BV802AT
Rev. 3405C–FLASH–9/04
相关PDF资料
PDF描述
AT49BV802A-70CI 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory
AT49BV802A-70TI 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory
AT49BV802AT 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory
AT49BV802AT-70CI 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory
AT49BV802AT-70TI 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory
相关代理商/技术参数
参数描述
AT49BV802A-70CI 功能描述:闪存 8M TOP BOOT- 8M BTTM BOOT RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
AT49BV802A-70CI SL383 功能描述:IC FLASH 8MBIT 70NS 48CBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M(8Mx32) 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA(8x13) 包装:托盘 其它名称:Q2841869
AT49BV802A-70CI-T 功能描述:IC FLASH 8MBIT 70NS 48CBGA 制造商:microchip technology 系列:- 包装:带卷(TR) 零件状态:停產 存储器类型:非易失 存储器格式:闪存 技术:FLASH 存储容量:8Mb (1M x 8,512K x 16) 写周期时间 - 字,页:200μs 访问时间:70ns 存储器接口:并联 电压 - 电源:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C(TC) 安装类型:表面贴装 封装/外壳:48-VFBGA,CSBGA 供应商器件封装:48-CBGA(6x8) 基本零件编号:AT49BV802 标准包装:2,500
AT49BV802A-70CU 功能描述:闪存 8M TOP BOOT- 8M BTTM BOOT RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
AT49BV802A-70TI 功能描述:闪存 8M TOP BOOT- 8M BTTM BOOT RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel