参数资料
型号: AT49BV802A
厂商: Atmel Corp.
英文描述: 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory
中文描述: 8兆位(为512k × 16 / 1米× 8)3伏,只有闪存
文件页数: 7/29页
文件大小: 253K
代理商: AT49BV802A
7
AT49BV802A(T)
3405C–FLASH–9/04
RDY/BUSY:
An open-drain READY/BUSY output pin provides another method of detecting
the end of a program or erase operation. RDY/BUSY is actively pulled low during the internal
program and erase cycles and is released at the completion of the cycle. The open-drain con-
nection allows for OR-tying of several devices to the same RDY/BUSY line. Please see
“Status Bit Table” on page 10 for more details.
CFI:
Common Flash Interface (CFI) is a published, standardized data structure that may be
read from a flash device. CFI allows system software to query the installed device to deter-
mine the configurations, various electrical and timing parameters, and functions supported by
the device. CFI is used to allow the system to learn how to interface to the flash device most
optimally. The two primary benefits of using CFI are ease of upgrading and second source
availability. The command to enter the CFI Query mode is a one-bus cycle command which
requires writing data 98h to address 55h. The CFI Query command can be written when the
device is ready to read data or can also be written when the part is in the product ID mode.
Once in the CFI Query mode, the system can read CFI data at the addresses given in Table 1
on page 23. To exit the CFI Query mode, the product ID exit command must be given.
HARDWARE DATA PROTECTION:
The Hardware Data Protection feature protects against
inadvertent programs to the AT49BV802A(T) in the following ways: (a) V
CC
sense: if V
CC
is
below 1.8V (typical), the program function is inhibited. (b) V
CC
power-on delay: once V
CC
has
reached the V
CC
sense level, the device will automatically time out 10 ms (typical) before pro-
gramming. (c) Program inhibit: holding any one of OE low, CE high or WE high inhibits
program cycles.
INPUT LEVELS:
While operating with a 2.65V to 3.6V power supply, the address inputs and
control inputs (OE, CE and WE) may be driven from 0 to 5.5V without adversely affecting the
operation of the device. The I/O lines can only be driven from 0 to V
CC
+ 0.6V.
相关PDF资料
PDF描述
AT49BV802A-70CI 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory
AT49BV802A-70TI 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory
AT49BV802AT 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory
AT49BV802AT-70CI 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory
AT49BV802AT-70TI 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory
相关代理商/技术参数
参数描述
AT49BV802A-70CI 功能描述:闪存 8M TOP BOOT- 8M BTTM BOOT RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
AT49BV802A-70CI SL383 功能描述:IC FLASH 8MBIT 70NS 48CBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M(8Mx32) 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA(8x13) 包装:托盘 其它名称:Q2841869
AT49BV802A-70CI-T 功能描述:IC FLASH 8MBIT 70NS 48CBGA 制造商:microchip technology 系列:- 包装:带卷(TR) 零件状态:停產 存储器类型:非易失 存储器格式:闪存 技术:FLASH 存储容量:8Mb (1M x 8,512K x 16) 写周期时间 - 字,页:200μs 访问时间:70ns 存储器接口:并联 电压 - 电源:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C(TC) 安装类型:表面贴装 封装/外壳:48-VFBGA,CSBGA 供应商器件封装:48-CBGA(6x8) 基本零件编号:AT49BV802 标准包装:2,500
AT49BV802A-70CU 功能描述:闪存 8M TOP BOOT- 8M BTTM BOOT RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
AT49BV802A-70TI 功能描述:闪存 8M TOP BOOT- 8M BTTM BOOT RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel