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参数资料
| 型号： | AT49BV802AT-70CI |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory |
| 中文描述： | 512K X 16 FLASH 3V PROM, 70 ns, PBGA48 |
| 封装： | 6 X 8 MM, 1 MM HIEGHT, 0.80 MM PITCH, PLASTIC, CBGA-48 |
| 文件页数： | 3/29页 |
| 文件大小： | 253K |
| 代理商： | AT49BV802AT-70CI |
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3
AT49BV802A(T)
3405C–FLASH–9/04
Block Diagram
Device
Operation
READ:
The AT49BV802A(T) is accessed like an EPROM. When CE and OE are low and WE
is high, the data stored at the memory location determined by the address pins are asserted
on the outputs. The outputs are put in the high impedance state whenever CE or OE is high.
This dual-line control gives designers flexibility in preventing bus contention.
COMMAND SEQUENCES:
When the device is first powered on, it will be reset to the read or
standby mode, depending upon the state of the control line inputs. In order to perform other
device functions, a series of command sequences are entered into the device. The command
sequences are shown in the “Command Definition in Hex” table on page 11 (I/O8 - I/O15 are
don’t care inputs for the command codes). The command sequences are written by applying a
low pulse on the WE or CE input with CE or WE low (respectively) and OE high. The address
is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by the
first rising edge of CE or WE. Standard microprocessor write timings are used. The address
locations used in the command sequences are not affected by entering the command
sequences.
RESET:
A RESET input pin is provided to ease some system applications. When RESET is at
a logic high level, the device is in its standard operating mode. A low level on the RESET input
halts the present device operation and puts the outputs of the device in a high impedance
state. When a high level is reasserted on the RESET pin, the device returns to the read or
standby mode, depending upon the state of the control inputs.
ERASURE:
Before a byte/word can be reprogrammed, it must be erased. The erased state of
memory bits is a logical “1”. The entire device can be erased by using the Chip Erase com-
mand or individual sectors can be erased by using the Sector Erase command.
IDENTIFIER
REGISTER
STATUS
REGISTER
DATA
COMPARATOR
O
M
OUTPUT
BUFFER
INPUT
BUFFER
COMMAND
REGISTER
D
R
Y-GATING
WRITE STATE
MACHINE
PROGRAM/ERASE
VOLTAGE SWITCH
CE
WE
OE
RESET
BYTE
RDY/BUSY
VCC
GND
Y-DECODER
X-DECODER
INPUT
BUFFER
ADDRESS
LATCH
I/O0 - I/O15/A-1
A0 - A18
MAIN
MEMORY
相关PDF资料 |
PDF描述 |
|---|---|
| AT49BV802AT-70TI | 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory |
| AT49BV8192A-12CI | 8-Megabit 1M x 8/ 512K x 16 CMOS Flash Memory |
| AT49BV8192A-12TC | 8-Megabit 1M x 8/ 512K x 16 CMOS Flash Memory |
| AT49BV8192A-12TI | 8-Megabit 1M x 8/ 512K x 16 CMOS Flash Memory |
| AT49BV8192A-15CC | 8-Megabit 1M x 8/ 512K x 16 CMOS Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT49BV802AT-70CI SL383 | 功能描述:IC FLASH 8MBIT 70NS 48CBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
| AT49BV802AT-70CI-T | 功能描述:IC FLASH 8MBIT 70NS 48CBGA 制造商:microchip technology 系列:- 包装:带卷（TR） 零件状态:停產 存储器类型:非易失 存储器格式:闪存 技术:FLASH 存储容量:8Mb （1M x 8，512K x 16） 写周期时间 - 字，页:200μs 访问时间:70ns 存储器接口:并联 电压 - 电源:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C（TC） 安装类型:表面贴装 封装/外壳:48-VFBGA，CSBGA 供应商器件封装:48-CBGA（6x8） 基本零件编号:AT49BV802 标准包装:2,500 |
| AT49BV802AT-70CU | 功能描述:闪存 8M TOP BOOT-PKG- 8M TOP BOOT RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49BV802AT-70TI | 功能描述:闪存 8M TOP BOOT-PKG- 8M TOP BOOT RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49BV802AT-70TI SL383 | 功能描述:IC FLASH 8MBIT 70NS 48TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
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