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参数资料
| 型号： | AT49LV1024A |
| 厂商： | Atmel Corp. |
| 英文描述： | 1-megabit (64K x 16) 3-volt Only Flash Memory |
| 中文描述： | 1兆位（64K的× 16）3伏，只有闪存 |
| 文件页数： | 2/14页 |
| 文件大小： | 308K |
| 代理商： | AT49LV1024A |
2
AT49BV/LV1024A
3332B–FLASH–12/03
Block Diagram
Device Operation
READ:
The AT49BV/LV1024A is accessed like an EPROM. When CE and OE are low
and WE is high, the data stored at the memory location determined by the address pins
is asserted on the outputs. The outputs are put in the high-impedance state whenever
CE or OE is high. This dual-line control gives designers flexibility in preventing bus
contention.
CHIP ERASE:
When the boot block programming lockout feature is not enabled, the
boot block and the main memory block will erase together from the same Chip Erase
command (See Command Definitions table). If the boot block lockout function has been
enabled, data in the boot section will not be erased. However, data in the main memory
section will be erased. After a chip erase, the device will return to the read mode.
MAIN MEMORY ERASE:
As an alternative to the chip erase, a main memory block
erase can be performed, which will erase all words not located in the boot block region
to an FFFFH. Data located in the boot region will not be changed during a main memory
block erase. The Main Memory Erase command is a six-bus cycle operation. The
address (555H) is latched on the falling edge of the sixth cycle while the 30H data input
is latched on the rising edge of WE. The main memory erase starts after the rising edge
of WE of the sixth cycle. Please see Main Memory Erase cycle waveforms. The main
memory erase operation is internally controlled; it will automatically time to completion.
WORD PROGRAMMING:
Once the memory array is erased, the device is programmed
(to a logic “0”) on a word-by-word basis. Please note that a data “0” cannot be pro-
grammed back to a “1”; only erase operations can convert “0”s to “1”s. Programming is
accomplished via the internal device command register and is a four-bus cycle opera-
tion (please refer to the Command Definitions table). The device will automatically
generate the required internal program pulses.
The program cycle has addresses latched on the falling edge of WE or CE, whichever
occurs last, and the data latched on the rising edge of WE or CE, whichever occurs first.
Programming is completed after the specified t
BP
cycle time. The Data Polling feature
may also be used to indicate the end of a program cycle.
BOOT BLOCK PROGRAMMING LOCKOUT:
The device has one designated block
that has a programming lockout feature. This feature prevents programming of data in
the designated block once the feature has been enabled. The size of the block is 8K
words. This block, referred to as the boot block, can contain secure code that is used to
bring up the system. Enabling the lockout feature will allow the boot code to stay in the
OE, CE, AND WE
LOGIC
Y DECODER
X DECODER
INPUT/OUTPUT
BUFFERS
DATA LATCH
Y-GATING
OPTIONAL BOOT
BLOCK (8K WORDS)
MAIN MEMORY
(56K WORDS)
OE
WE
CE
ADDRESS
INPUTS
VCC
GND
DATA INPUTS/OUTPUTS
I/O15 - I/O0
16
2000H
1FFFH
0000H
FFFFH
相关PDF资料 |
PDF描述 |
|---|---|
| AT49LV1024A-45VC | 1-megabit (64K x 16) 3-volt Only Flash Memory |
| AT49LV1024A-45VL | 1-megabit (64K x 16) 3-volt Only Flash Memory |
| AT49BV1604T-90TC | 16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory |
| AT49BV1604T-90TI | 16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory |
| AT49BV1604T-90UC | 16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT49LV1024A-45VC | 功能描述:IC FLASH 1MBIT 45NS 40VSOP 制造商:microchip technology 系列:- 包装:托盘 零件状态:停產 存储器类型:非易失 存储器格式:闪存 技术:FLASH 存储容量:1Mb （64K x 16） 写周期时间 - 字，页:50μs 访问时间:45ns 存储器接口:并联 电压 - 电源:3 V ~ 3.6 V 工作温度:0°C ~ 70°C（TC） 安装类型:表面贴装 封装/外壳:40-TFSOP（0.488"，12.40mm 宽） 供应商器件封装:40-VSOP 基本零件编号:AT49LV1024 标准包装:160 |
| AT49LV1024A-45VL | 功能描述:闪存 Parallel 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49LV1025-70JC | 功能描述:IC FLASH 1MBIT 70NS 44PLCC 制造商:microchip technology 系列:- 包装:管件 零件状态:停產 存储器类型:非易失 存储器格式:闪存 技术:FLASH 存储容量:1Mb （64K x 16） 写周期时间 - 字，页:50μs 访问时间:70ns 存储器接口:并联 电压 - 电源:3 V ~ 3.6 V 工作温度:0°C ~ 70°C（TC） 安装类型:表面贴装 封装/外壳:44-LCC（J 形引线） 供应商器件封装:44-PLCC（16.59x16.59） 基本零件编号:AT49LV1025 标准包装:27 |
| AT49LV1025-70VC | 功能描述:IC FLASH 1MBIT 70NS 40VSOP 制造商:microchip technology 系列:- 包装:托盘 零件状态:停產 存储器类型:非易失 存储器格式:闪存 技术:FLASH 存储容量:1Mb （64K x 16） 写周期时间 - 字，页:50μs 访问时间:70ns 存储器接口:并联 电压 - 电源:3 V ~ 3.6 V 工作温度:0°C ~ 70°C（TC） 安装类型:表面贴装 封装/外壳:40-TFSOP（0.488"，12.40mm 宽） 供应商器件封装:40-VSOP 基本零件编号:AT49LV1025 标准包装:160 |
| AT49LV1025-90JC | 功能描述:IC FLASH 1MBIT 90NS 44PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
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