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参数资料
| 型号： | AT49LV8011T |
| 厂商： | Atmel Corp. |
| 英文描述： | 8-megabit 3-volt Flash Memory(8M位 3V闪速存储器) |
| 中文描述： | 8兆位3伏的快闪记忆体（800万位3V的闪速存储器） |
| 文件页数： | 1/18页 |
| 文件大小： | 322K |
| 代理商： | AT49LV8011T |
1
Features
Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV)
Access Time – 90 ns
Sector Erase Architecture
Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout
Two 16K Word (32K Byte) Sectors with Individual Write Lockout
Two 8K Word (16K Byte) Sectors with Individual Write Lockout
Four 4K Word (8K Byte) Sectors with Individual Write Lockout
Fast Word Program Time –
20 μs
Fast Sector Erase Time
–
200 ms
Dual Plane Organization, Permitting Concurrent Read while Program/Erase
Memory Plane A: Four 4K Word, Two 8K Word and Two 16K Word Sectors
Memory Plane B: Fourteen 32K Word Sectors
Erase Suspend Capability
–
Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
Low-power Operation
–
25 mA Active
–
10 μA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
Optional VPP Pin for Fast Programming
RESET Input for Device Initialization
Sector Program Unlock Command
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
Description
The AT49BV/LV8011(T) is a 2.7- to 3.3-volt 8-megabit Flash memory organized as
524,288 words of 16 bits each or 1,048,576 bytes of 8 bits each. The x16 data
appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided
into 22 sectors for erase operations. The device is offered in 48-pin TSOP and 48-ball
CBGA packages. The device has CE, and OE control signals to avoid any bus
Rev. 1265E
–
01/00
8-megabit
(512K x 16/1M x 8)
3-volt Only
Flash Memory
AT49BV8011
AT49BV8011T
AT49LV8011
AT49LV8011T
Pin Configurations
Pin Name
Function
A0 - A18
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
RESET
Reset
RDY/BUSY
READY/BUSY Output
VPP
Optional Power Supply for Faster
Program/Erase Operations
I/O0 - I/O14
Data Inputs/Outputs
I/O15 (A-1)
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
BYTE
Selects Byte or Word Mode
NC
No Connect
VCCQ
Output Power Supply
(continued)
相关PDF资料 |
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| AT49BV802A | 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory |
| AT49BV802A-70CI | 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory |
| AT49BV802A-70TI | 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory |
| AT49BV802AT | 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory |
| AT49BV802AT-70CI | 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT49LW040-33JC | 制造商:Atmel Corporation 功能描述:NOR Flash, 512K x 8, 32 Pin, Plastic, PLCC |
| AT49LW080-33JC | 功能描述:IC FLASH 8MBIT 33MHZ 32PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
| AT49LW080-33JC SL383 | 功能描述:IC FLASH 8MBIT 33MHZ 32PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
| AT49LW080-33JC-T | 功能描述:IC FLASH 8MBIT 33MHZ 32PLCC 制造商:microchip technology 系列:- 包装:带卷（TR） 零件状态:停產 存储器类型:非易失 存储器格式:闪存 技术:FLASH 存储容量:8Mb （1M x 8） 时钟频率:33MHz 写周期时间 - 字，页:300μs 存储器接口:并联 电压 - 电源:3 V ~ 3.6 V 工作温度:0°C ~ 85°C（TC） 安装类型:表面贴装 封装/外壳:32-LCC（J 形引线） 供应商器件封装:32-PLCC 基本零件编号:AT49LW080 标准包装:750 |
| AT49LW080-33JX | 功能描述:IC FLASH 8MBIT 33MHZ 32PLCC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
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