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参数资料
| 型号： | AT49SN6416-70CI |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 64-megabit (4M x 16) Burst/Page Mode 1.8-volt Flash Memory |
| 中文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, CBGA56 |
| 封装： | 7 X 10 MM, 1 MM HEIGHT, 0.75 MM PITCH, CERAMIC, BGA-56 |
| 文件页数： | 12/42页 |
| 文件大小： | 418K |
| 代理商： | AT49SN6416-70CI |
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12
3464C–FLASH–2/05
AT49SN6416(T)
3.15
Erase Suspend/erase Resume
The Erase Suspend command allows the system to interrupt a sector erase or plane erase oper-
ation. The erase suspend command does not work with the Chip Erase feature. Using the erase
suspend command to suspend a sector erase operation, the system can program or read data
from a different sector within the same plane. Since this device is organized into four planes,
there is no need to use the erase suspend feature while erasing a sector when you want to read
data from a sector in another plane. After the Erase Suspend command is given, the device
requires a maximum time of 15 μs to suspend the erase operation. After the erase operation has
been suspended, the plane that contains the suspended sector enters the erase-suspend-read
mode. The system can then read data or program data to any other sector within the device. An
address is not required during the Erase Suspend command. During a sector erase suspend,
another sector cannot be erased. To resume the sector erase operation, the system must write
the Erase Resume command. The Erase Resume command is a one-bus cycle command,
which does require the plane address. Read, Read Status Register, Product ID Entry, Clear Sta-
tus Register, Program, Program Suspend, Erase Resume, Sector Softlock/Hardlock, Sector
Unlock are valid commands during an erase suspend.
3.16
Program Suspend/program Resume
The Program Suspend command allows the system to interrupt a programming operation and
then read data from a different word within the memory. After the Program Suspend command is
given, the device requires a maximum of 10 μs to suspend the programming operation. After the
programming operation has been suspended, the system can then read from any other word
within the device. An address is not required during the program suspend operation. To resume
the programming operation, the system must write the Program Resume command. The pro-
gram suspend and resume are one-bus cycle commands. The command sequence for the
erase suspend and program suspend are the same, and the command sequence for the erase
resume and program resume are the same. Read, Read Status Register, Product ID Entry, Pro-
gram Resume are valid commands during a Program Suspend.
3.17
128-bit Protection Register
The AT49SN6416(T) contains a 128-bit register that can be used for security purposes in sys-
tem design. The protection register is divided into two 64-bit blocks. The two blocks are
designated as block A and block B. The data in block A is non-changeable and is programmed
at the factory with a unique number. The data in block B is programmed by the user and can be
locked out such that data in the block cannot be reprogrammed. To program block B in the pro-
tection register, the two-bus cycle Program Protection Register command must be used as
shown in the
“Command Definition Table” on page 19
. To lock out block B, the two-bus cycle
lock protection register command must be used as shown in the
“Command Definition Table”
.
Data bit D1 must be zero during the second bus cycle. All other data bits during the second bus
cycle are don’t cares. To determine whether block B is locked out, the status of sector B com-
mand is given. If data bit D1 is zero, block B is locked. If data bit D1 is one, block B can be
reprogrammed. Please see the
“Protection Register Addressing Table” on page 20
for the
address locations in the protection register. To read the protection register, the Product ID Entry
command is given followed by a normal read operation from an address within the protection
register. After determining whether block B is protected or not or reading the protection register,
the Read command must be given to return to the read mode.
相关PDF资料 |
PDF描述 |
|---|---|
| AT49SN6416T | 64-megabit (4M x 16) Burst/Page Mode 1.8-volt Flash Memory |
| AT49SN6416T-70CI | 64-megabit (4M x 16) Burst/Page Mode 1.8-volt Flash Memory |
| AT49SN6416 | 64-megabit (4M x 16) Burst/Page Mode 1.8-volt Flash Memory |
| AT49SV322A | 32-megabit (2M x 16/4M x 8) 1.8-volt Only Flash Memory |
| AT49SV322AT | 32-megabit (2M x 16/4M x 8) 1.8-volt Only Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT49SV163D-80CU | 功能描述:闪存 Parallel 闪存 1.8V 80NS RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49SV163D-80TU | 功能描述:闪存 Parallel 闪存 1.8V 80NS RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49SV163DT-80CU | 功能描述:闪存 Parallel 闪存 1.8V 80NS, GR RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49SV163DT-80TU | 功能描述:闪存 Parallel 闪存 1.8V 80NS, GR RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49SV322A-80CU | 制造商:Atmel Corporation 功能描述:Flash Parallel 1.8V 32Mbit 4M/2M x 8bit/16bit 80ns 48-Pin CBGA |
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