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参数资料
| 型号： | AT49SN6416-70CI |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 64-megabit (4M x 16) Burst/Page Mode 1.8-volt Flash Memory |
| 中文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, CBGA56 |
| 封装： | 7 X 10 MM, 1 MM HEIGHT, 0.75 MM PITCH, CERAMIC, BGA-56 |
| 文件页数： | 21/42页 |
| 文件大小： | 418K |
| 代理商： | AT49SN6416-70CI |
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21
3464C–FLASH–2/05
AT49SN6416(T)
Notes:
1. Default State
2. Burst configuration setting of B13 - B11 = 010 (clock latency of two), B9 = 1 (hold data for two clock cycles) and B8 = 1
(WAIT asserted one clock cycle before data is valid) is not supported.
3. Data is not ready when WAIT is asserted.
Clock Latency versus Input Clock Frequency
Figure 8-1.
Output Configuration
7.
Burst Configuration Register Table
B15 Program (AT49SN6416)
0
1
(1)
Synchronous Burst Reads Enabled
Asynchronous BurstReads Enabled
B15 Program (AT49SN6416T)
1
0
(1)
Synchronous Burst Reads Enabled
Asynchronous BurstReads Enabled
B15 Read
0
1
Synchronous Burst Reads Enabled
Asynchronous BurstReads Enabled
B14
Reserved for future use
B13 - B11:
(2)
010
011
100
101
110
(1)
Clock Latency of Two
Clock Latency of Three
Clock Latency of Four
Clock Latency of Five
Clock Latency of Six
B10
0
1
(1)(3)
WAIT Signal is Asserted Low
WAIT Signal is Asserted High
B9
0
1
(1)
Hold Data for One Clock
Hold Data for Two Clocks
B8
0
1
(1)
1
(1)
WAIT Asserted during Clock Cycle in which Data is Valid
WAIT Asserted One Clock Cycle before Data is Valid
B7
Linear Burst Sequence
B6
0
1
(1)
00
(1)
Burst Starts and Data Output on Falling Clock Edge
Burst Starts and Data Output on Rising Clock Edge
B5 - B4
Reserved for Future Use
B3
0
1
(1)
Reserved for future use
Don’t Wrap Accesses Within Burst Length set by B2 - B0
B2 - B0
001
010
011
111
(1)
Four-word Burst
Eight-word Burst
Sixteen-word Burst
Continuous Burst
8.
Minimum Clock Latency
(Minimum Number of Clocks Following Address Latch)
Input Clock Frequency
5, 6
≤
66 MHz
4
≤
61 MHz
2, 3
≤
40 MHz
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
CLK
I/00 - I/015
I/00 - I/015
1 CLK
Data Hold
(B9 = 0)
2 CLK
Data Hold
(B9 = 1)
相关PDF资料 |
PDF描述 |
|---|---|
| AT49SN6416T | 64-megabit (4M x 16) Burst/Page Mode 1.8-volt Flash Memory |
| AT49SN6416T-70CI | 64-megabit (4M x 16) Burst/Page Mode 1.8-volt Flash Memory |
| AT49SN6416 | 64-megabit (4M x 16) Burst/Page Mode 1.8-volt Flash Memory |
| AT49SV322A | 32-megabit (2M x 16/4M x 8) 1.8-volt Only Flash Memory |
| AT49SV322AT | 32-megabit (2M x 16/4M x 8) 1.8-volt Only Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT49SV163D-80CU | 功能描述:闪存 Parallel 闪存 1.8V 80NS RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49SV163D-80TU | 功能描述:闪存 Parallel 闪存 1.8V 80NS RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49SV163DT-80CU | 功能描述:闪存 Parallel 闪存 1.8V 80NS, GR RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49SV163DT-80TU | 功能描述:闪存 Parallel 闪存 1.8V 80NS, GR RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49SV322A-80CU | 制造商:Atmel Corporation 功能描述:Flash Parallel 1.8V 32Mbit 4M/2M x 8bit/16bit 80ns 48-Pin CBGA |
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