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| 型号： | AT89C51RC2 |
| 厂商： | Atmel Corp. |
| 英文描述： | Hex Inverter 14-TVSOP -40 to 125 |
| 中文描述： | 8位微控制器具有16K / 32K字节闪存 |
| 文件页数： | 12/24页 |
| 文件大小： | 1379K |
| 代理商： | AT89C51RC2 |
AT89C51RD2 / AT89C51ED2 QualPack
12 Rev. 0 – 2003 July
4.3.3 Time Dependent Dielectric Breakdown
Purpose:
To evaluate the AT56800 thin gate oxide TDDB performance as follows:
a) To determine the activation energy of gate oxide failures on STI active edge capacitors
b) To determine the field acceleration factor for intrinsic gate oxide failures
c) To determine the sigma the lognormal standard deviation of the time to breakdown distribution of the
intrinsic gate oxide
Test Parameters:
Lot
9G3470 (wafers 4, 5, 18)
Min thickness:
72.9A
Max thickness:
74.7A
Capacitor size:
6.267 um
2
The stress conditions used are shown below:
Temperature/Field
9.5MV/cm
10.0MV/cm
225C
N=5
N=5
200C
N=5
N=5
175C
N=5
N=5
Accumulated total stress time: 132 hours / 46 capacitors
Calculation Parameters:
Failure Criteria:
0.01% failures
Temp/Voltage use:
105°C / 3.3V
Oxide thickness:
63A (target –10%)
Lifetime Prediction:
The equation used to describe the breakdown of gate oxides is:
Tbd(i) = exp(SIGMA*Z(i) + GAMMA*Eox +Ea/kT + T0)
Where
Tbd(i) is the time to breakdown of the i
th
capacitor,
SIGMA is the lognormal standard deviation of the breakdown distribution,
Z(i) is the Z-score of the i
th
capacitor (essentially the difference between its breakdown time and the mean
measured in standard deviations),
GAMMA is the Field acceleration constant,
Eox is the oxide field,
Ea is the activation energy of this failure mechanism,
K is Boltzmann’s constant,
T is the Kelvin Temperature, and
T0 is a fitting constant.
10.5MV/cm
N=5
N=5
N=6
相关PDF资料 |
PDF描述 |
|---|---|
| AT89C51RC2-RLTIL | 8-bit Microcontroller with 16K/ 32K Bytes Flash |
| AT89C51RC2-RLTIM | Hex Inverter 14-SOIC -40 to 125 |
| AT89C51RC2-SLSIM | Hex Inverter 14-SOIC -40 to 125 |
| AT89C51RD2-IM | Hex Inverter 14-SOIC -40 to 125 |
| AT89C51RD2-RDTIM | 8-bit Flash Microcontroller |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT89C51RC2_0312 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Microcontroller with 16K/32K Bytes Flash |
| AT89C51RC2-3CSCM | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:8-bit Microcontroller with 16K/ 32K Bytes Flash |
| AT89C51RC2-3CSIM | 功能描述:IC 8051 MCU FLASH 32K 40DIP RoHS:否 类别:集成电路 (IC) >> 嵌入式 - 微控制器， 系列:89C 标准包装:9 系列:87C 核心处理器:8051 芯体尺寸:8-位 速度:40/20MHz 连通性:UART/USART 外围设备:POR，WDT 输入/输出数:32 程序存储器容量:32KB（32K x 8） 程序存储器类型:OTP EEPROM 大小:- RAM 容量:256 x 8 电压 - 电源 (Vcc/Vdd):4.5 V ~ 5.5 V 数据转换器:- 振荡器型:内部 工作温度:0°C ~ 70°C 封装/外壳:40-DIP（0.600"，15.24mm） 包装:管件 |
| AT89C51RC2-3CSUM | 功能描述:8位微控制器 -MCU 32kB Flash 1280B RAM 2.7V-5.5V RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| AT89C51RC-24AC | 功能描述:8位微控制器 -MCU 32K FLASH 4.0 TO 5.5V - 24MHZ RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
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