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参数资料
| 型号： | AT90PWM1-16MU |
| 厂商： | Atmel |
| 文件页数： | 14/90页 |
| 文件大小： | 0K |
| 描述： | IC AVR PWM 8KB FLASH 16MHZ 32QFN |
| 产品培训模块： | megaAVR Introduction |
| 标准包装： | 1 |
| 系列： | AVR® 90PWM 照明 |
| 核心处理器： | AVR |
| 芯体尺寸： | 8-位 |
| 速度： | 16MHz |
| 连通性： | SPI |
| 外围设备： | 欠压检测/复位，POR，PWM，WDT |
| 输入/输出数： | 19 |
| 程序存储器容量： | 8KB（8K x 8） |
| 程序存储器类型： | 闪存 |
| EEPROM 大小： | 512 x 8 |
| RAM 容量： | 512 x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 2.7 V ~ 5.5 V |
| 数据转换器： | A/D 8x10b |
| 振荡器型： | 内部 |
| 工作温度： | -40°C ~ 105°C |
| 封装/外壳： | 32-VQFN 裸露焊盘 |
| 包装： | 标准包装 |
| 其它名称： | AT90PWM1-16MUDKR |
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21
4378C–AVR–09/08
AT90PWM1
Bit 3 – EERIE: EEPROM Ready Interrupt Enable
Writing EERIE to one enables the EEPROM Ready Interrupt if the I bit in SREG is set. Writing
EERIE to zero disables the interrupt. The EEPROM Ready interrupt generates a constant inter-
rupt when EEWE is cleared. The interrupt will not be generated during EEPROM write or SPM.
Bit 2 – EEMWE: EEPROM Master Write Enable
The EEMWE bit determines whether setting EEWE to one causes the EEPROM to be written.
When EEMWE is set, setting EEWE within four clock cycles will write data to the EEPROM at
the selected address If EEMWE is zero, setting EEWE will have no effect. When EEMWE has
been written to one by software, hardware clears the bit to zero after four clock cycles. See the
description of the EEWE bit for an EEPROM write procedure.
Bit 1 – EEWE: EEPROM Write Enable
The EEPROM Write Enable Signal EEWE is the write strobe to the EEPROM. When address
and data are correctly set up, the EEWE bit must be written to one to write the value into the
EEPROM. The EEMWE bit must be written to one before a logical one is written to EEWE, oth-
erwise no EEPROM write takes place. The following procedure should be followed when writing
the EEPROM (the order of steps 3 and 4 is not essential):
1.
Wait until EEWE becomes zero.
2.
Wait until SPMEN (Store Program Memory Enable) in SPMCSR (Store Program Memory
Control and Status Register) becomes zero.
3.
Write new EEPROM address to EEAR (optional).
4.
Write new EEPROM data to EEDR (optional).
5.
Write a logical one to the EEMWE bit while writing a zero to EEWE in EECR.
6.
Within four clock cycles after setting EEMWE, write a logical one to EEWE.
The EEPROM can not be programmed during a CPU write to the Flash memory. The software
must check that the Flash programming is completed before initiating a new EEPROM write.
Step 2 is only relevant if the software contains a Boot Loader allowing the CPU to program the
Flash. If the Flash is never being updated by the CPU, step 2 can be omitted. See “Boot Loader
Support – Read-While-Write Self-Programming” on page 205 for details about Boot
programming.
Caution: An interrupt between step 5 and step 6 will make the write cycle fail, since the
EEPROM Master Write Enable will time-out. If an interrupt routine accessing the EEPROM is
interrupting another EEPROM access, the EEAR or EEDR Register will be modified, causing the
interrupted EEPROM access to fail. It is recommended to have the Global Interrupt Flag cleared
during all the steps to avoid these problems.
When the write access time has elapsed, the EEWE bit is cleared by hardware. The user soft-
ware can poll this bit and wait for a zero before writing the next byte. When EEWE has been set,
the CPU is halted for two cycles before the next instruction is executed.
Bit 0 – EERE: EEPROM Read Enable
The EEPROM Read Enable Signal EERE is the read strobe to the EEPROM. When the correct
address is set up in the EEAR Register, the EERE bit must be written to a logic one to trigger the
EEPROM read. The EEPROM read access takes one instruction, and the requested data is
available immediately. When the EEPROM is read, the CPU is halted for four cycles before the
next instruction is executed.
The user should poll the EEWE bit before starting the read operation. If a write operation is in
progress, it is neither possible to read the EEPROM, nor to change the EEAR Register.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AT90PWM1-16MUR | 功能描述:8位微控制器 -MCU AVR 8KFLASH 2PSC, 16MHz RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| AT90PWM1-16SE | 制造商:Atmel Corporation 功能描述: |
| AT90PWM1-16SU | 功能描述:8位微控制器 -MCU AVR 8Kflash 2PSC No DALI 16MHz RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| AT90PWM161-16MN | 功能描述:8位微控制器 -MCU 16 MHz, QFN, 105oC, Green, RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| AT90PWM161-16MNR | 功能描述:8位微控制器 -MCU 16 MHz, QFN, 105oC, Green, T&R RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
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