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参数资料
| 型号： | AT93C86AY6-10YH-1.8 |
| 厂商： | Atmel |
| 文件页数： | 6/18页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 16KBIT 2MHZ 8MAP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 16K（2K x 8 或 1K x 16） |
| 速度： | 250kHz，1MHz，2MHz |
| 接口： | Microwire 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-UDFN 裸露焊盘 |
| 供应商设备封装： | 8-MLP（2x3） |
| 包装： | 标准包装 |
| 其它名称： | AT93C86AY6-10YH-1.8DKR |
250 ns (t CS ). A logic “0” at DO indicates that programming is still in progress. A logic “1”
indicates that the memory location at the specified address has been written with the
data pattern contained in the instruction and the part is ready for further instructions. A
Ready/Busy status cannot be obtained if the CS is brought high after the end of the self-
timed programming cycle t WP .
ERASE ALL (ERAL): The Erase All (ERAL) instruction programs every bit in the mem-
ory array to the logic “1” state and is primarily used for testing purposes. The DO pin
outputs the Ready/Busy status of the part if CS is brought high after being kept low for a
minimum of 250 ns (t CS ). The ERAL instruction is valid only at V CC = 5.0V ± 10%.
WRITE ALL (WRAL) : The Write All (WRAL) instruction programs all memory locations
with the data patterns specified in the instruction. The DO pin outputs the Ready/Busy
status of the part if CS is brought high after being kept low for a minimum of 250 ns (t CS ).
The WRAL instruction is valid only at V CC = 5.0V ± 10%.
ERASE/WRITE DISABLE (EWDS): To protect against accidental data disturbance, the
Erase/Write Disable (EWDS) instruction disables all programming modes and should be
executed after all programming operations. The operation of the READ instruction is
independent of both the EWEN and EWDS instructions and can be executed at any
time.
6
AT93C86A
3408H–SEEPR–1/07
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