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参数资料
| 型号： | ATF-13336-STR |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封装： | CERAMIC, 36, MICRO-X-4 |
| 文件页数： | 1/3页 |
| 文件大小： | 46K |
| 代理商： | ATF-13336-STR |
5-36
2 – 16 GHz Low Noise
Gallium Arsenide FET
Technical Data
36 micro-X Package
Features
Low Noise Figure:
1.4 dB Typical at 12 GHz
High Associated Gain:
9.0 dB Typical at 12 GHz
High Output Power:
17.5 dBm Typical P 1 dB at
12 GHz
Cost Effective Ceramic
Microstrip Package
Tape-and-Reel Packaging
Option Available[1]
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
NFO
Optimum Noise Figure: VDS = 2.5 V, IDS = 20 mA
f = 8.0 GHz
dB
1.2
f = 12.0 GHz
dB
1.4
1.6
f = 14.0 GHz
1.6
GA
Gain @ NFO: VDS = 2.5 V, IDS = 20 mA
f = 8.0 GHz
dB
11.5
f = 12.0 GHz
dB
8.0
9.0
f = 14.0 GHz
dB
7.5
P1 dB
Power Output @ 1 dB Gain Compression:
f = 12.0 GHz dBm
17.5
VDS = 4 V, IDS = 40 mA
G1 dB
1 dB Compressed Gain: VDS = 4 V, IDS = 40 mA
f = 12.0 GHz
dB
8.5
gm
Transconductance: VDS = 2.5 V, VGS = 0 V
mmho
25
55
IDSS
Saturated Drain Current: VDS = 2.5 V, VGS = 0 V
mA
40
50
90
VP
Pinch-off Voltage: VDS = 2.5 V, IDS = 1 mA
V
-4.0
-1.5
-0.5
Note:
1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”.
ATF-13336
Description
The ATF-13336 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective micro-
strip package. Its premium noise
figure makes this device appropri-
ate for use in low noise amplifiers
operating in the 2-16 GHz
frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250 microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
5965-8724E
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-13336-TR1 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| ATF-13336-TR1 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| ATF-13736-STR | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| ATF-13736-TR1 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| ATF-13736-TR2 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-13336-TR1 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-16 GHz Low Noise Gallium Arsenide FET |
| ATF-13736 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-16 GHz Low Noise Gallium Arsenide FET |
| ATF-13736-STR | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-16 GHz Low Noise Gallium Arsenide FET |
| ATF-13736-TR1 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-16 GHz Low Noise Gallium Arsenide FET |
| ATF13786 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Surface Mount Gallium Arsenide FET for Oscillators |
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