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参数资料
| 型号： | ATF-13336-STR |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封装： | CERAMIC, 36, MICRO-X-4 |
| 文件页数： | 2/3页 |
| 文件大小： | 46K |
| 代理商： | ATF-13336-STR |
5-37
ATF-13336 Typical Performance, T
A = 25°C
ATF-13336 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VDS
Drain-Source Voltage
V
+5
VGS
Gate-Source Voltage
V
-4
VGD
Gate-Drain Voltage
V
-6
IDS
Drain Current
mA
IDSS
PT
Power Dissipation [2,3]
mW
225
TCH
Channel Temperature
°C
175
TSTG
Storage Temperature
°C
-65to+175
Thermal Resistance :
θ
jc = 400°C/W; TCH = 150°C
Liquid Crystal Measurement:
1
mSpotSize[5]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 2.5mW/
°C for
TCASE> 85°C.
4. Storage above +150
°C may tarnish
the leads of this package difficult to
solder into a circuit. After a device
has been soldered into a circuit, it
may be safely stored up to 175
°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
θ
jc
than do alternate methods. See
MEASUREMENTS section for
more information.
Part Number Ordering Information
Part Number
Devices Per Reel
Reel Size
ATF-13336-TR1
1000
7"
ATF-13336-STR
10
strip
FREQUENCY (GHz)
NF
O
(dB)
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 2.5 V, IDS = 20 mA.
FREQUENCY (GHz)
GAIN
(dB)
2.0
1.5
1.0
0.5
0
16
14
12
10
8
6
G
A
(dB)
6.0
10.0
8.0
12.0 14.0 16.0
GA
NFO
|S21|2
MSG
MAG
2.0
4.0
6.0
8.0 10.0 12.0 16.0
25
20
15
10
5
0
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2.5V, IDS = 20 mA, TA = 25°C.
IDS (mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. IDS.
VDS = 2.5V, f = 12.0 GHz.
NF
O
(dB)
020
10
40
50
30
60
14
12
10
8
G
A
(dB)
2.5
2.0
1.5
1.0
GA
NFO
ATF-13336 Noise Parameters: V
DS = 2.5 V, IDS = 20 mA
Freq.
NFO
Γ
opt
GHz
dB
Mag
Ang
RN/50
4.0
0.8
.63
93
.27
6.0
1.1
.47
138
.10
8.0
1.2
.40
-153
.20
12.0
1.4
.52
-45
.88
14.0
1.6
.57
-2
1.3
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-13336-TR1 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| ATF-13336-TR1 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| ATF-13736-STR | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| ATF-13736-TR1 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| ATF-13736-TR2 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-13336-TR1 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-16 GHz Low Noise Gallium Arsenide FET |
| ATF-13736 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-16 GHz Low Noise Gallium Arsenide FET |
| ATF-13736-STR | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-16 GHz Low Noise Gallium Arsenide FET |
| ATF-13736-TR1 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-16 GHz Low Noise Gallium Arsenide FET |
| ATF13786 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Surface Mount Gallium Arsenide FET for Oscillators |
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