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参数资料
| 型号： | ATF-33143-BLK |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SC-70, 4 PIN |
| 文件页数： | 11/15页 |
| 文件大小： | 86K |
| 代理商： | ATF-33143-BLK |
5
ATF-33143 Typical Performance Curves, continued
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 4V 80 mA bias. This circuit represents a trade-off
between optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have
been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of Idsq the device is
running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when
compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4 V
and IDSQ = 20 mA, Id increases to 62 mA as a P1dB of +19 dBm is approached.
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency and
Current at 4 V.
F
min
(dB)
010
2.0
1.5
1.0
0.5
0
4
28
6
80 mA
60 mA
FREQUENCY (GHz)
Figure 13. Associated Gain vs.
Frequency and Current at 4 V.
G
a
(dB)
010
30
25
20
15
10
5
0
4
28
6
80 mA
60 mA
FREQUENCY (GHz)
Figure 14. Fmin and Ga vs. Frequency
and Temp at VDS = 4 V, IDS = 80 mA.
G
a
(dB)
NOISE
FIGURE
(dB)
010
25
20
15
10
5
2.0
1.5
1.0
0.5
0
5
25
°C
-40
°C
85
°C
FREQUENCY (MHz)
Figure 15. P1dB, OIP3 vs. Frequency
and Temp at VDS = 4 V, IDS = 80 mA.
P
1dB
,OIP3
(dBm)
0
8000
40
35
30
25
20
15
4000
2000
6000
25
°C
-40
°C
85
°C
IDSQ (mA)
Figure 16. OIP3, P1dB, NF and Gain vs.
Bias[1,2] at 3.9 GHz.
OIP3,
P
1dB
(dBm),
GAIN
(dB)
0
250
35
30
25
20
15
10
5
0
100
50
200
150
NOISE
FIGURE
(dB)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
P1dB
OIP3
Gain
NF
IDSQ (mA)
Figure 17. OIP3, P1dB, NF and Gain vs.
Bias [1,2] at 5.8 GHz.
OIP3,
P
1dB
(dBm),
GAIN
(dB)
0
250
35
30
25
20
15
10
5
0
100
50
200
150
NOISE
FIGURE
(dB)
3.5
2.5
1.5
0.5
-0.5
P1dB
OIP3
NF
Gain
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-33143-TR2 | L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-33143-TR1 | L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-33143-TR2G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-33143-BLKG | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-33143-TR1G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-33143-BLKG | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-33143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-33143-G | 制造商:Avago Technologies 功能描述:Transistor JFET N-Ch 5.5V 305mA SOT343 |
| ATF-33143-TR1 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-33143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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