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参数资料
型号： ATF-33143-BLK
元件分类： 小信号晶体管
英文描述： L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封装： PLASTIC, SC-70, 4 PIN
文件页数： 14/15页
文件大小： 86K
代理商： ATF-33143-BLK
8
ATF-33143 Typical Noise Parameters
VDS = 3 V, IDS = 60 mA
Freq.
Fmin
Γ
opt
Rn/50
Ga
GHz
dB
Mag.
Ang.
-
dB
0.5
0.10
0.78
33.20
0.088
22.86
0.9
0.14
0.73
51.92
0.084
20.00
1.0
0.15
0.71
56.60
0.082
19.54
1.5
0.21
0.64
80.00
0.069
17.27
1.8
0.25
0.60
94.04
0.059
16.30
2.0
0.28
0.50
101.20
0.052
15.69
2.5
0.34
0.46
127.60
0.037
14.47
3.0
0.42
0.43
151.20
0.028
13.37
4.0
0.55
0.42
-169.30
0.026
11.48
5.0
0.63
0.45
-138.30
0.053
9.94
6.0
0.78
0.51
-113.70
0.110
8.71
7.0
0.93
0.57
-93.50
0.210
7.71
8.0
1.09
0.63
-75.60
0.360
6.87
9.0
1.24
0.66
-57.90
0.560
6.14
10.0
1.39
0.66
-38.40
0.810
5.44
FREQUENCY (GHz)
Figure 21. MSG/MAG and |S21|
2 vs.
Frequency at 3V, 60 mA.
MSG/MAG
and
|S
21
|2
(dB)
020
30
25
20
15
10
5
0
-5
10
MSG
MAG
|S21|2
515
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measure-
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
ATF-33143 Typical Scattering Parameters, V
DS = 3 V, IDS = 60 mA
Freq.
S11
S21
S12
S22
MSG/MAG
K
(GHz)
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
(dB)
0.5
0.87
-82.93
22.77
13.75
129.71
-27.96
0.040
52.00
0.34
-139.11
25.28
0.26
0.8
0.80
-110.10
20.74
10.89
114.34
-26.20
0.049
43.35
0.40
-155.74
23.14
0.43
1.0
0.77
-129.25
19.01
8.92
103.10
-25.19
0.055
38.29
0.43
-165.96
22.04
0.51
1.5
0.74
-155.43
16.18
6.44
86.47
-23.74
0.065
32.41
0.46
178.89
19.90
0.67
1.8
0.74
-165.25
15.03
5.64
79.74
-23.10
0.070
30.36
0.47
172.98
18.91
0.74
2.0
0.73
-173.80
14.01
5.02
73.56
-22.62
0.074
28.53
0.48
167.68
18.25
0.79
2.5
0.73
171.48
12.27
4.11
62.30
-21.62
0.083
24.60
0.48
158.12
16.89
0.87
3.0
0.73
158.20
10.83
3.48
51.85
-20.82
0.091
20.35
0.49
149.88
15.72
0.93
4.0
0.73
134.86
8.47
2.65
32.58
-19.41
0.107
10.66
0.50
134.51
13.18
1.01
5.0
0.75
116.04
6.55
2.13
14.46
-18.42
0.120
-0.22
0.52
117.92
10.99
1.05
6.0
0.77
98.78
4.95
1.77
-3.17
-17.65
0.131
-12.38
0.54
101.20
9.47
1.08
7.0
0.78
80.95
3.48
1.49
-20.45
-17.14
0.139
-25.01
0.57
85.41
8.19
1.12
8.0
0.80
64.69
2.12
1.28
-36.99
-16.77
0.145
-37.16
0.59
69.82
7.17
1.13
9.0
0.82
49.72
0.88
1.11
-53.24
-16.54
0.149
-49.72
0.62
53.61
6.37
1.14
10.0
0.85
34.73
-0.18
0.98
-69.73
-16.25
0.154
-62.87
0.64
38.34
5.96
1.12
11.0
0.86
20.74
-1.44
0.85
-85.63
-16.42
0.151
-75.81
0.67
23.66
5.20
1.14
12.0
0.87
6.71
-2.67
0.74
-100.73
-16.59
0.148
-88.33
0.70
9.29
4.53
1.16
13.0
0.88
-8.29
-3.97
0.63
-115.32
-16.95
0.142 -100.45
0.73
-3.50
3.63
1.24
14.0
0.88
-19.46
-5.26
0.55
-127.89
-17.46
0.134 -110.25
0.77
-16.62
2.92
1.30
15.0
0.90
-28.00
-6.45
0.48
-140.34
-17.92
0.127 -120.07
0.79
-30.39
2.69
1.28
16.0
0.87
-40.30
-7.68
0.41
-153.80
-18.27
0.122 -131.08
0.81
-43.25
1.22
1.50
17.0
0.90
-48.76
-8.52
0.38
-164.56
-18.34
0.121 -141.30
0.82
-53.54
1.11
1.43
18.0
0.90
-60.79
-9.58
0.33
-175.28
-18.86
0.114 -149.36
0.85
-62.62
0.94
1.43
相关PDF资料
PDF描述
ATF-33143-TR2 L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-33143-TR1 L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-33143-TR2G X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-33143-BLKG X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-33143-TR1G X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相关代理商/技术参数
参数描述
ATF-33143-BLKG 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF-33143-BLKG 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
ATF-33143-G 制造商:Avago Technologies 功能描述:Transistor JFET N-Ch 5.5V 305mA SOT343
ATF-33143-TR1 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-33143-TR1G 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
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