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参数资料
| 型号： | ATF-33143-BLKG |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件页数： | 11/18页 |
| 文件大小： | 521K |
| 代理商： | ATF-33143-BLKG |
2
ATF-33143 Absolute Maximum Ratings[1]
Absolute
Symbol
Parameter
Units
Maximum
VDS
Drain - Source Voltage[2]
V
5.5
VGS
Gate - Source Voltage[2]
V
-5
VGD
Gate Drain Voltage[2]
V
-5
IDS
Drain Current[2]
mA
Idss[3]
Pdiss
Total Power Dissipation[4]
mW
600
Pin max
RF Input Power
dBm
20
TCH
Channel Temperature[5]
°C
160
TSTG
Storage Temperature
°C
-65 to 160
θjc
Thermal Resistance[6]
°C/W
145
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Assumes DC quiesent conditions.
3. VGS = 0V
4. Source lead temperature is 25°C. Derate
6 mW/°C for TL > 60°C.
5. Please refer to failure rates in reliability
section to assess the reliability impact
of running devices above a channel
temperature of 140°C.
6. Thermal resistance measured using 150°C
Liquid Crystal Measurement method.
Product Consistency Distribution Charts [8, 9]
Notes:
7. Under large signal conditions, VGS may swing positive and the drain current may exceed Idss.These conditions are acceptable as long as the maximum
Pdiss and Pin max ratings are not exceeded.
8. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
9. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based
on production test requirements. Circuit losses have been de-embedded from actual measurements.
10. The probability of a parameter being between ±1σ is 68.3%, between ±2σ is 95.4% and between ±3σ is 99.7%.
V DS (V)
Figure 1. Typical Pulsed I-V Curves[7]. (VGS=-0.2V per step)
I D
S
(m
A)
0
2
4
6
8
500
400
300
200
100
0
0 V
–0.6 V
+0.6 V
NF (dB)
Figure 2. NF @ 2 GHz, 4V, 80 mA.
LSL=0.2, Nominal=0.53, USL=0.8
0.2
0.4
0.3
0.6
0.5
0.8
0.7
-3 Std
+3 Std
Cpk = 1.7
Std = 0.05
120
100
80
60
40
20
0
OIP3 (dBm)
Figure 3. OIP3 @ 2 GHz, 4V, 80 mA.
LSL=30.0, Nominal=33.3, USL=37.0
29
37
-3 Std
+3 Std
Cpk = 1.21
Std = 0.94
100
80
60
40
20
0
33
31
35
GAIN (dB)
Figure 4. Gain @ 2 GHz, 4V, 80 mA.
LSL=13.5, Nominal=14.8, USL=16.5
13
14
15
16
17
-3 Std
+3 Std
Cpk = 2.3
Std = 0.2
120
100
80
60
40
20
0
相关PDF资料 |
PDF描述 |
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| ATF-33143-TR1G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-331M4-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-331M4-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-331M4-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-331M4-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-33143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-33143-G | 制造商:Avago Technologies 功能描述:Transistor JFET N-Ch 5.5V 305mA SOT343 |
| ATF-33143-TR1 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-33143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-33143-TR2 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
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