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参数资料
| 型号： | ATF-33143-BLKG |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件页数： | 17/18页 |
| 文件大小： | 521K |
| 代理商： | ATF-33143-BLKG |
8
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these
measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
ATF-33143 Typical Noise Parameters
VDS = 2V, IDS = 40 mA
Freq.
Fmin
Γopt
Rn/50
Ga
GHz
dB
Mag.
Ang.
-
dB
0.5
0.26
0.45
26.00
0.07
24.74
0.9
0.30
0.38
42.20
0.07
21.02
1.0
0.31
0.36
44.80
0.07
20.36
1.5
0.34
0.31
69.50
0.06
17.40
1.8
0.34
0.26
93.60
0.04
16.50
2.0
0.39
0.27
108.60
0.05
15.82
2.5
0.51
0.28
150.70
0.03
14.59
3.0
0.53
0.32
165.60
0.03
13.13
4.0
0.61
0.41
-162.10
0.04
11.27
5.0
0.70
0.49
-136.80
0.06
9.92
6.0
0.82
0.53
-113.60
0.11
8.70
7.0
0.93
0.59
-91.50
0.23
7.71
8.0
1.04
0.62
-72.60
0.38
6.69
9.0
1.12
0.67
-55.90
0.59
6.04
10.0
1.21
0.69
-42.20
0.77
5.73
ATF-33143 Typical Scattering Parameters, VDS = 2V, IDS = 40 mA
Freq.
S11
S21
S12
S22
MSG/MAG
(GHz)
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
(dB)
0.5
0.88
-72.70
22.08
12.81
134.40
-27.02
0.045
54.50
0.28
-118.70
24.54
0.8
0.79
-112.10
19.46
9.41
111.20
-24.13
0.062
40.70
0.37
-149.90
21.81
1.0
0.78
-119.80
18.86
8.86
106.50
-23.93
0.064
38.00
0.38
-155.40
21.41
1.5
0.75
-149.60
16.11
6.44
88.30
-22.57
0.075
29.80
0.42
-176.20
19.34
1.8
0.74
-162.80
14.70
5.47
79.80
-22.14
0.079
26.80
0.45
174.70
18.40
2.0
0.74
-170.10
13.84
4.94
74.80
-21.84
0.082
24.90
0.46
169.40
17.80
2.5
0.74
172.30
11.98
3.98
63.00
-21.24
0.088
20.80
0.49
160.10
16.56
3.0
0.75
159.10
10.37
3.31
53.10
-20.68
0.094
17.10
0.51
152.10
15.46
4.0
0.75
137.00
7.95
2.50
35.00
-19.59
0.106
9.30
0.53
139.20
13.73
5.0
0.76
117.20
6.20
2.05
17.20
-18.56
0.119
-0.70
0.54
124.70
11.44
6.0
0.78
98.10
4.69
1.73
-1.30
-17.83
0.129
-12.80
0.54
108.00
9.80
7.0
0.80
80.10
3.12
1.44
-19.30
-17.42
0.135
-26.00
0.57
90.40
8.35
8.0
0.83
64.50
1.68
1.22
-35.20
-17.29
0.137
-37.30
0.60
74.80
7.43
9.0
0.83
50.30
0.48
1.07
-49.30
-17.08
0.140
-46.80
0.63
62.70
6.45
10.0
0.86
36.30
-0.46
0.96
-64.30
-16.59
0.148
-58.30
0.65
50.90
6.41
11.0
0.88
21.50
-1.50
0.85
-80.20
-16.53
0.149
-71.30
0.68
37.40
6.14
12.0
0.90
7.20
-2.70
0.74
-95.80
-16.81
0.144
-83.90
0.72
21.40
5.64
13.0
0.91
-5.00
-4.24
0.62
-110.20
-17.38
0.135
-95.60
0.75
5.80
4.60
14.0
0.91
-15.50
-5.49
0.54
-121.90
-17.78
0.129 -103.90
0.77
-5.70
3.64
15.0
0.92
-27.50
-6.42
0.49
-134.20
-18.00
0.126 -113.70
0.80
-15.80
3.44
16.0
0.93
-40.50
-7.26
0.44
-146.80
-17.87
0.128 -124.20
0.82
-25.70
3.22
17.0
0.94
-52.30
-8.20
0.40
-160.40
-18.07
0.125 -136.40
0.83
-37.90
3.11
18.0
0.93
-61.20
-9.51
0.34
-171.00
-18.79
0.115 -145.10
0.85
-49.70
1.79
FREQUENCY (GHz)
Figure 21. MSG/MAG and |S21|2 vs. Frequency at 2V, 40 mA.
MSG/MAG
and
|S
21
|
2 (dB)
0
20
40
30
20
10
0
-10
10
5
15
MSG
MAG
|S21|2
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-33143-TR1G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-331M4-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-331M4-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-331M4-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-331M4-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-33143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-33143-G | 制造商:Avago Technologies 功能描述:Transistor JFET N-Ch 5.5V 305mA SOT343 |
| ATF-33143-TR1 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-33143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-33143-TR2 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
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