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参数资料
| 型号： | ATF-331M4-BLK |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | MINIPAK-4 |
| 文件页数： | 5/16页 |
| 文件大小： | 212K |
| 代理商： | ATF-331M4-BLK |
13
ATF-331M4 Minipak Model
NFET=yes
PFET=no
Vto=0.95
Beta=0.48
Lambda=0.09
Alpha=4
B=0.8
Tnom=27
Idstc=
Vbi=0.7
Tau=
Betatce=
Delta1=0.2
Delta2=
Gscap=3
Cgs=1.764 pF
Gdcap=3
Cgd=0.338 pF
Rgd=
Tqm=
Vmax=
Fc=
Rd=0.125
Rg=1
Rs=0.0625
Ld=0.0034 nH
Lg=0.0039 nH
Ls=0.0012 nH
Cds=0.0776 pF
Crf=0.1
Rc=62.5
Gsfwd=1
Gsrev=0
Gdfwd=1
Gdrev=0
Vjr=1
Is=1 nA
Ir=1 nA
Imax=0.1
Xti=
N=
Eg=
Vbr=
Vtotc=
Rin=
Taumdl=no
Fnc=1 E6
R=0.17
C=0.2
P=0.65
wVgfwd=
wBvgs=
wBvgd=
wBvds=
wldsmax=
wPmax=
AllParams=
Advanced_Curtice2_Model
MESFETM1
GATE
SOURCE
INSIDE Package
Port
G
Num=1
C
C1
C=0.28 pF
Port
S1
Num=2
SOURCE
DRAIN
Port
S2
Num=4
Port
D
Num=3
L
L6
L=0.147 nH
R=0.001
C
C2
C=0.046 pF
L
L7
L=0.234 nH
R=0.001
MSub
TLINP
TL3
Z=Z2 Ohm
L=23.6 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL9
Z=Z2 Ohm
L=11 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
VAR
VAR1
K=5
Z2=85
Z1=30
Var
Egn
TLINP
TL1
Z=Z2/2 Ohm
L=22 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL2
Z=Z2/2 Ohm
L=20 0 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL7
Z=Z2/2 Ohm
L=5.2 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL5
Z=Z2 Ohm
L=27.5 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
L
L1
L=0.234 nH
R=0.001
L
L4
L=0.281 nH
R=0.001
GaAsFET
FET1
Mode1=MESFETM1
Mode=Nonlinear
MSUB
MSub2
H=25.0 mil
Er=9.6
Mur=1
Cond=1.0E+50
Hu=3.9e+034 mil
T=0.15 mil
TanD=0
Rough=0 mil
ATF-331M4 Die Model
This model can be used as a design tool. It has been tested on ADS for various specifications. However, for
more precise and accurate design, please refer to the measured data in this data sheet. For future
improvements, Agilent reserves the right to change these models without prior notice.
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-331M4-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-331M4-TR2G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-331M4-TR1G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-331M4-BLKG | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR2G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-331M4-TR1 | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-331M4-TR2 | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF34143 | 制造商:HP 制造商全称:Agilent(Hewlett-Packard) 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-34143 | 制造商:Avago Technologies 功能描述:MOSFET RF SOT-343 |
| ATF34143BLK | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R |
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