参数资料
型号: ATF-331M4-TR1G
厂商: AGILENT TECHNOLOGIES INC
元件分类: 小信号晶体管
英文描述: X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封装: MINIPAK-4
文件页数: 1/16页
文件大小: 212K
代理商: ATF-331M4-TR1G
Agilent ATF-331M4 Low Noise
Pseudomorphic HEMT in a
Miniature Leadless Package
Data Sheet
Description
Agilent Technologies’s
ATF-331M4 is a high linearity,
low noise pHEMT housed in a
miniature leadless package.
The ATF-331M4’s small size and
low profile makes it ideal for the
design of hybrid modules and
other space-constraint devices.
Based on its featured perfor-
mance, ATF-331M4 is ideal for
the first or second stage of base
station LNA due to the excellent
combination of low noise figure
and enhanced linearity [1]. The
device is also suitable for appli-
cations in Wireless LAN,
WLL/RLL, MMDS, and other
systems requiring super low
noise figure with good intercept
in the 450 MHz to 10 GHz
frequency range.
Note:
1. From the same PHEMT FET family, the
smaller geometry ATF-34143 may also be
considered for the higher gain performance,
particularly in the higher frequency band
(1.8 GHz and up).
Features
Low noise figure
Excellent uniformity in product
specifications
1600 micron gate width
Miniature leadless package
1.4 mm x 1.2 mm x 0.7 mm
Tape-and-reel packaging option
available
Specifications
2 GHz; 4 V, 60 mA (Typ.)
0.6 dB noise figure
15 dB associated gain
19 dBm output power at 1 dB gain
compression
31 dBm output 3rd order intercept
Applications
Tower mounted amplifier, low noise
amplifier and driver amplifier for
GSM/TDMA/CDMA base stations
LNA for WLAN, WLL/RLL, MMDS
and wireless data infrastructures
General purpose discrete PHEMT for
other ultra low noise applications
MiniPak 1.4 mm x 1.2 mm Package
Pin Connections and
Package Marking
Note:
Top View. Package marking provides orientation,
product identification and date code.
“P” = Device Type Code
“x” = Date code character. A different
character is assigned for each month
and year.
Px
Source
Pin 3
Gate
Pin 2
Source
Pin 1
Drain
Pin 4
Px
相关PDF资料
PDF描述
ATF-331M4-BLKG X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-34143-TR2G X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-34143-TR1G X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-34143-TR1 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-34143-BLK X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相关代理商/技术参数
参数描述
ATF-331M4-TR2 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS(最大值/最小值):4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF34143 制造商:HP 制造商全称:Agilent(Hewlett-Packard) 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-34143 制造商:Avago Technologies 功能描述:MOSFET RF SOT-343
ATF34143BLK 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R
ATF-34143-BLK 制造商:Agilent Technologies 功能描述:JFET Transistor, N-Channel, SOT-343R