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参数资料
型号： ATF-331M4-TR1G
厂商： AGILENT TECHNOLOGIES INC
元件分类： 小信号晶体管
英文描述： X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封装： MINIPAK-4
文件页数： 15/16页
文件大小： 212K
代理商： ATF-331M4-TR1G
8
Freq
Fmin
Γ
opt
Γ
opt
Rn/50
Ga
GHz
dB
Mag.
Ang.
dB
0.50
0.36
0.35
0.2
0.06
21.97
0.90
0.4
0.341
24.3
0.06
18.96
1.00
0.41
0.34
31.1
0.05
18.77
1.50
0.45
0.341
62.5
0.04
16.31
1.80
0.48
0.346
79.3
0.05
15.79
2.00
0.5
0.351
89.6
0.05
14.93
2.50
0.54
0.37
112.8
0.04
13.67
3.00
0.59
0.395
132.4
0.04
12.62
4.00
0.68
0.461
162.3
0.03
10.78
5.00
0.77
0.538
-177.6
0.02
9.28
6.00
0.86
0.616
-164.4
0.02
8.34
7.00
0.95
0.683
-155.3
0.04
7.37
8.00
1.04
0.729
-147.2
0.07
6.63
9.00
1.13
0.742
-137.3
0.11
6.19
10.00
1.22
0.712
-122.6
0.19
5.23
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
Typical Noise Parameters,
VDS = 3V, IDS = 60 mA
Figure 20. MSG/MAG and |S21|
2 vs.
Frequency at 3 V , 60 mA.
MSG
MAG
FREQUENCY (GHz)
MSG/MAG
and
|S
21
|
2 (dB)
020
10
515
40
30
20
10
0
-10
|S21|
2
ATF-331M4 Typical Scattering Parameters,
VDS = 3V, IDS = 60 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.5
0.81
-93.60
22.93
14.01
127.00
-28.64
0.037
54.00
0.39
-167.20
25.78
0.8
0.78
-120.70
19.68
9.64
112.10
-26.56
0.047
48.30
0.46
-172.07
23.12
1.0
0.77
-133.60
18.81
8.72
105.40
-25.68
0.052
46.80
0.48
-175.73
22.24
1.5
0.75
-152.50
15.50
5.96
93.43
-23.88
0.064
46.03
0.51
176.57
19.69
1.8
0.74
-160.50
14.27
5.17
88.00
-22.73
0.073
45.93
0.51
172.73
18.50
2.0
0.74
-164.40
14.02
5.02
84.80
-22.16
0.078
46.03
0.52
170.47
18.09
2.5
0.72
-171.30
11.06
3.57
77.97
-20.72
0.092
45.93
0.52
164.60
15.89
3.0
0.70
-175.30
9.80
3.09
71.93
-18.40
0.120
45.37
0.53
161.90
14.10
4.0
0.71
162.70
7.39
2.34
53.33
-17.52
0.133
35.20
0.54
137.43
11.21
5.0
0.73
149.70
5.70
1.93
41.90
-16.95
0.142
29.87
0.54
134.20
9.70
6.0
0.71
140.60
4.61
1.70
29.10
-16.31
0.153
21.73
0.55
116.23
8.18
7.0
0.73
123.70
3.54
1.50
15.10
-15.55
0.167
11.40
0.56
110.13
7.39
8.0
0.74
112.70
3.33
1.47
7.10
-15.09
0.176
6.37
0.56
109.10
7.35
9.0
0.76
97.60
3.12
1.43
-4.37
-15.04
0.177
-2.77
0.57
93.43
7.16
10.0
0.79
83.40
2.52
1.34
-17.80
-14.75
0.183
-14.27
0.57
78.70
6.95
11.0
0.86
61.80
0.66
1.08
-32.10
-14.80
0.182
-26.87
0.57
66.20
6.68
12.0
0.87
62.00
-0.15
0.98
-37.60
-14.29
0.193
-31.00
0.63
60.03
6.21
13.0
0.88
52.00
-0.96
0.90
-49.50
-14.80
0.182
-41.97
0.68
49.47
5.74
14.0
0.89
44.50
-1.56
0.84
-58.70
-15.34
0.171
-50.27
0.71
40.23
5.55
15.0
0.92
38.80
-3.38
0.68
-67.60
-15.65
0.165
-58.43
0.74
30.87
5.16
16.0
0.94
33.20
-5.04
0.56
-74.90
-18.42
0.120
-65.47
0.77
25.03
4.92
17.0
0.94
28.20
-5.15
0.55
-80.90
-17.65
0.131
-71.67
0.78
18.87
4.96
18.0
0.93
24.60
-6.11
0.50
-84.90
-17.79
0.129
-76.30
0.80
14.17
3.76
相关PDF资料
PDF描述
ATF-331M4-BLKG X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-34143-TR2G X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-34143-TR1G X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-34143-TR1 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-34143-BLK X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相关代理商/技术参数
参数描述
ATF-331M4-TR2 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF34143 制造商:HP 制造商全称:Agilent(Hewlett-Packard) 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-34143 制造商:Avago Technologies 功能描述:MOSFET RF SOT-343
ATF34143BLK 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R
ATF-34143-BLK 制造商:Agilent Technologies 功能描述:JFET Transistor, N-Channel, SOT-343R
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