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参数资料
| 型号： | ATF-35143-BLK |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SC-70, 4 PIN |
| 文件页数： | 12/19页 |
| 文件大小： | 170K |
| 代理商： | ATF-35143-BLK |
2
ATF-35143 Absolute Maximum Ratings[1]
Absolute
Symbol
Parameter
Units
Maximum
VDS
Drain - Source Voltage [2]
V
5.5
VGS
Gate - Source Voltage[2]
V-5
VGD
Gate Drain Voltage[2]
V-5
IDS
Drain Current[2]
mA
Idss[3]
Pdiss
Total Power Dissipation[4]
mW
300
Pin max
RF Input Power
dBm
14
TCH
Channel Temperature
°C
160
TSTG
Storage Temperature
°C
-65 to 160
θ
jc
Thermal Resistance[5]
°C/W
310
Notes:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
2. Assumes DC quiesent conditions.
3. VGS = 0 V
4. Source lead temperature is 25
°C.
Derate 3.2 mW/
°C for TL > 67°C.
5. Thermal resistance measured using
150
°C Liquid Crystal Measurement
method.
Product Consistency Distribution Charts [7, 8]
VDS (V)
Figure 1. Typical Pulsed I-V Curves[6].
(VGS = -0.2 V per step)
I DS
(mA)
02
4
6
8
120
100
80
60
40
20
0
+0.6 V
0 V
–0.6 V
OIP3 (dBm)
Figure 2. OIP3 @ 2 GHz, 2 V, 15 mA.
LSL=19.0, Nominal=20.9, USL=23.0
19
21
20
23
22
24
120
100
80
60
40
20
0
-3 Std
+3 Std
Cpk = 1.73
Std = 0.35
NF (dB)
Figure 3. NF @ 2 GHz, 2 V, 15 mA.
LSL=0.2, Nominal=0.37, USL=0.7
0.2
0.4
0.3
0.6
0.5
0.7
200
160
120
80
40
0
-3 Std
+3 Std
Cpk = 3.7
Std = 0.03
GAIN (dB)
Figure 4. Gain @ 2 GHz, 2 V, 15 mA.
LSL=16.5, Nominal=18.0, USL=19.5
16
17
18
19
20
160
120
80
40
0
-3 Std
+3 Std
Cpk = 2.75
Std = 0.17
Notes:
6. Under large signal conditions, VGS may
swing positive and the drain current may
exceed Idss. These conditions are
acceptable as long as the maximum Pdiss
and Pin max ratings are not exceeded.
7. Distribution data sample size is 450
samples taken from 9 different wafers.
Future wafers allocated to this product
may have nominal values anywhere
within the upper and lower spec limits.
8. Measurements made on production test
board. This circuit represents a trade-off
between an optimal noise match and a
realizeable match based on production test
requirements. Circuit losses have been de-
embedded from actual measurements.
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| ATF-35143-TR1G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-35143-BLKG | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-35143-TR1 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-35143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-35143-TR2 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-35143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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