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参数资料
| 型号： | ATF-35143-BLKG |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件页数： | 1/19页 |
| 文件大小： | 608K |
| 代理商： | ATF-35143-BLKG |
ATF-35143
Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Data Sheet
Features
Lead-free Option Available
Low Noise Figure
Excellent Uniformity in Product Specifications
Low Cost Surface Mount Small Plastic Package
SOT-343 (4 lead SC-70)
Tape-and-Reel Packaging Option Available
Specifications
1.9 GHz; 2 V, 15 mA (Typ.)
0.4 dB Noise Figure
18 dB Associated Gain
11 dBm Output Power at 1 dB Gain Compression
21 dBm Output 3rd Order Intercept
Applications
Low Noise Amplifier for Cellular/PCS Handsets
LNA for WLAN, WLL/RLL, LEO, and MMDS Applications
General Purpose Discrete PHEMT for Other Ultra Low
Noise Applications
Description
Avago’s ATF-35143 is a high dynamic range, low noise,
PHEMT housed in a 4-lead SC-70 (SOT-343) surface
mount plastic package.
Based on its featured performance, ATF-35143 is suitable
for applications in cellular and PCS base stations, LEO
systems, MMDS, and other systems requiring super low
noise figure with good intercept in the 450 MHz to 10
GHz frequency range.
Other PHEMT devices in this family are the ATF-34143
and the ATF-33143. The typical specifications for these
devices at 2 GHz are shown in the table below:
Surface Mount Package
SOT-343
Pin Connections and Package Marking
Part No.
Gate Width
Bias Point
NF (dB)
Ga (dB)
OIP3 (dBm)
ATF-33143
1600
4 V, 80 mA
0.5
15.0
33.5
ATF-34143
800
4 V, 60 mA
0.5
17.5
31.5
ATF-35143
400
2 V, 15 mA
0.4
18.0
21.0
SOURCE
DRAIN
GATE
SOURCE
5Px
Note: Top View. Package marking provides
orientation and identification.
“5P” = Device code
“x” = Date code character. A new character
is assigned for each month, year.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-35143-TR1G | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR2G | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-35143-TR1 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-35143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-35143-TR2 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-35143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF35176 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-18 GHz Low Noise Pseudomorphic HEMT |
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