收藏本站
参数资料
型号： ATF-35143-BLKG
元件分类： 小信号晶体管
英文描述： L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封装： LEAD FREE, PLASTIC, SC-70, 4 PIN
文件页数： 4/19页
文件大小： 608K
代理商： ATF-35143-BLKG
12
ATF-35143 Typical Noise Parameters
VDS = 3 V, IDS = 30 mA
Freq.
Fmin
Γopt
Rn/50
Ga
GHz
dB
Mag.
Ang.
-
dB
0.5
0.11
0.87
3.5
0.18
21.6
0.9
0.16
0.81
12.5
0.17
20.5
1.0
0.17
0.79
14.7
0.17
20.2
1.5
0.23
0.72
25.9
0.16
18.9
1.8
0.27
0.68
32.6
0.15
18.3
2.0
0.28
0.65
37.1
0.15
17.9
2.5
0.35
0.59
49.3
0.14
17.0
3.0
0.41
0.53
62.5
0.12
16.3
4.0
0.53
0.43
91.6
0.09
14.9
5.0
0.66
0.37
123.4
0.07
13.6
6.0
0.79
0.33
157.1
0.05
12.4
7.0
0.91
0.31
-168.3
0.06
11.4
8.0
1.04
0.31
-133.7
0.10
10.6
9.0
1.17
0.33
-100.0
0.17
9.9
10.0
1.29
0.38
-68.1
0.28
9.3
FREQUENCY (GHz)
Figure 24. MSG/MAG and |S21|2 vs. Frequency at 3 V, 30 mA.
MSG/MA
G
and
S
21
(dB)
0
20
5
10
15
MSG
MAG
S21
30
25
20
15
10
5
0
-5
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 30 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.50
0.99
-21.01
18.45
8.36
163.08
-33.98
0.020
76.89
0.53
-15.23
26.21
0.75
0.96
-32.39
18.29
8.21
153.62
-30.46
0.030
69.94
0.51
-21.01
24.36
1.00
0.93
-42.42
18.03
7.97
145.49
-28.40
0.038
64.80
0.50
-27.72
23.22
1.50
0.88
-61.18
17.42
7.43
130.11
-25.35
0.054
54.32
0.47
-40.61
21.39
1.75
0.85
-70.01
17.09
7.15
122.91
-24.44
0.060
49.77
0.45
-46.56
20.72
2.00
0.82
-78.57
16.74
6.87
116.00
-23.61
0.066
45.15
0.43
-52.43
20.17
2.50
0.76
-95.09
16.03
6.33
102.87
-22.38
0.076
36.87
0.40
-63.37
19.21
3.00
0.70
-111.30
15.32
5.83
90.60
-21.41
0.085
29.08
0.37
-73.44
18.36
4.00
0.61
-143.48
13.93
4.97
68.04
-20.26
0.097
14.96
0.31
-91.21
17.10
5.00
0.56
-174.00
12.65
4.29
47.37
-19.58
0.105
2.38
0.25
-108.94
16.11
6.00
0.54
157.98
11.50
3.76
28.09
-19.02
0.112
-10.00
0.19
-128.04
15.26
7.00
0.54
130.06
10.42
3.32
9.32
-18.64
0.117
-22.21
0.14
-151.53
13.78
8.00
0.55
105.20
9.42
2.96
-8.66
-18.34
0.121
-32.79
0.11
179.40
12.10
9.00
0.59
82.53
8.39
2.63
-26.26
-18.06
0.125
-44.11
0.09
138.30
11.00
10.00
0.63
63.18
7.49
2.37
-43.25
-17.79
0.129
-54.57
0.09
95.15
10.36
11.00
0.67
44.96
6.56
2.13
-60.82
-17.52
0.133
-66.16
0.14
62.17
9.76
12.00
0.71
26.64
5.58
1.90
-78.23
-17.46
0.134
-78.18
0.20
39.86
9.05
13.00
0.74
7.94
4.46
1.67
-95.07
-17.65
0.131
-89.74
0.27
23.41
8.14
14.00
0.77
-5.53
3.36
1.47
-110.42
-17.86
0.128
-99.72
0.34
5.08
7.40
15.00
0.82
-16.02
2.33
1.31
-125.79
-17.99
0.126
-109.60
0.39
-11.42
7.41
16.00
0.82
-28.09
1.25
1.16
-141.72
-18.06
0.125
-120.39
0.46
-25.74
6.44
17.00
0.85
-40.02
0.23
1.03
-156.00
-18.06
0.125
-131.03
0.51
-35.29
6.19
18.00
0.87
-55.63
-0.85
0.91
-171.48
-18.49
0.119
-141.69
0.57
-46.81
5.71
相关PDF资料
PDF描述
ATF-35143-TR1G L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-35143-TR2G L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-35143-TR1 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-35143-BLK X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-35143-TR2 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相关代理商/技术参数
参数描述
ATF-35143-TR1 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-35143-TR1G 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF-35143-TR2 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-35143-TR2G 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF35176 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-18 GHz Low Noise Pseudomorphic HEMT
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*