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参数资料
| 型号： | ATF-35143-TR1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SC-70, 4 PIN |
| 文件页数： | 13/19页 |
| 文件大小： | 160K |
| 代理商： | ATF-35143-TR1 |
3
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measure-
ments. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test
requirements. Circuit losses have been de-embedded from actual measurements.
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.5 dB loss)
Input
Matching Circuit
Γ_mag = 0.66
Γ_ang = 5°
(0.4 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0.5 dB loss)
Output
ATF-35143 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameters and Test Conditions
Units
Min.
Typ.[2]
Max.
Idss[1]
Saturated Drain Current
VDS = 1.5 V, VGS = 0 V
mA
40
65
80
VP[1]
Pinchoff Voltage
VDS = 1.5 V, IDS = 10% of Idss
V
-0.65
- 0.5
- 0.35
Id
Quiescent Bias Current
VGS = 0.45 V, VDS = 2 V
mA
—
15
—
gm[1]
Transconductance
VDS = 1.5 V, gm = Idss /VP
mmho
90
120
—
IGDO
Gate to Drain Leakage Current
VGD = 5 V
A
250
Igss
Gate Leakage Current
VGD = VGS = -4 V
A
—
10
150
f = 2 GHz
VDS = 2 V, IDS = 15 mA
dB
0.4
0.7
NF
Noise Figure[3]
VDS = 2 V, IDS = 5 mA
0.5
0.9
f = 900 MHz
VDS = 2 V, IDS = 15 mA
dB
0.3
VDS = 2 V, IDS = 5 mA
0.4
f = 2 GHz
VDS = 2 V, IDS = 15 mA
dB
16.5
18
19.5
Ga
Associated Gain[3]
VDS = 2 V, IDS = 5 mA
14
16
18
f = 900 MHz
VDS = 2 V, IDS = 15 mA
dB
20
VDS = 2 V, IDS = 5 mA
18
Output 3rd Order
f = 2 GHz
VDS = 2 V, IDS = 15 mA
dBm
19
21
OIP3
Intercept Point[4, 5]
VDS = 2 V, IDS = 5 mA
14
f = 900 MHz
VDS = 2 V, IDS = 15 mA
dBm
19
VDS = 2 V, IDS = 5 mA
14
1 dB Compressed
f = 2 GHz
VDS = 2 V, IDSQ = 15 mA
dBm
10
P1dB
Intercept Point[4]
VDS = 2 V, IDSQ = 5 mA
8
f = 900 MHz
VDS = 2 V, IDSQ = 15 mA
dBm
9
VDS = 2 V, IDSQ = 5 mA
9
Notes:
1. Guaranteed at wafer probe level
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. 2 V 5 mA min/max data guaranteed via the 2 V 15 mA production test.
4. Measurements obtained using production test board described in Figure 5.
5. Pout = -10 dBm per tone
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-35143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-35143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-35143-TR2 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-35143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF35176 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-18 GHz Low Noise Pseudomorphic HEMT |
| ATF35376 | 制造商:AVANTEK 功能描述:JFET Transistor, N-Channel |
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