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参数资料
| 型号： | ATF-35143-TR2G |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件页数： | 12/19页 |
| 文件大小： | 608K |
| 代理商： | ATF-35143-TR2G |
2
ATF-35143 Absolute Maximum Ratings[1]
Absolute
Symbol
Parameter
Units
Maximum
VDS
Drain - Source Voltage[2]
V
5.5
VGS
Gate - Source Voltage[2]
V
-5
VGD
Gate Drain Voltage[2]
V
-5
IDS
Drain Current[2]
mA
Idss[3]
Pdiss
Total Power Dissipation[4]
mW
300
Pin max
RF Input Power
dBm
14
TCH
Channel Temperature
°C
160
TSTG
Storage Temperature
°C
-65 to 160
θjc
Thermal Resistance[5]
°C/W
150
Notes:
1. Operation of this device above any
one of these parameters may cause
permanent damage.
2. Assumes DC quiesent conditions.
3. VGS = 0V
4. Source lead temperature is 25°C.
Derate 3.2 mW/°C for TL > 67°C.
5. Thermal resistance measured using
QFI Measurement method.
Product Consistency Distribution Charts [7, 8]
VDS (V)
Figure 1. Typical Pulsed I-V Curves[6].
(VGS=-0.2V per step)
I DS
(mA)
0
2
4
6
8
120
100
80
60
40
20
0
+0.6 V
0 V
–0.6 V
OIP3 (dBm)
Figure 2. OIP3 @ 2 GHz, 2V, 15 mA.
LSL=19.0, Nominal=20.9, USL=23.0
19
21
20
23
22
24
120
100
80
60
40
20
0
-3 Std
+3 Std
Cpk = 1.73
Std = 0.35
NF (dB)
Figure 3. NF @ 2 GHz, 2V, 15 mA.
LSL=0.2, Nominal=0.37, USL=0.7
0.2
0.4
0.3
0.6
0.5
0.7
200
160
120
80
40
0
-3 Std
+3 Std
Cpk = 3.7
Std = 0.03
GAIN (dB)
Figure 4. Gain @ 2 GHz, 2V, 15 mA.
LSL=16.5, Nominal=18.0, USL=19.5
16
17
18
19
20
160
120
80
40
0
-3 Std
+3 Std
Cpk = 2.75
Std = 0.17
Notes:
6. Under large signal conditions, VGS may swing positive and the drain current may exceed Idss. These conditions are acceptable as long as the
maximum Pdiss and Pin max ratings are not exceeded.
7. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
8. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match
based on production test requirements. Circuit losses have been de-embedded from actual measurements.
相关PDF资料 |
PDF描述 |
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| ATF-35143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
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| ATF-35143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
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相关代理商/技术参数 |
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