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参数资料
| 型号： | ATF-36163-BLK |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SC-70, 6 PIN |
| 文件页数： | 11/11页 |
| 文件大小： | 112K |
| 代理商： | ATF-36163-BLK |
9
Package Dimensions
SC-70 6L/SOT-363
E
HE
D
e
A1
b
A
A2
Q1
L
c
DIMENSIONS (mm)
MIN.
1.15
1.80
0.80
0.00
0.10
0.15
0.10
MAX.
1.35
2.25
2.40
1.10
1.00
0.10
0.40
0.30
0.20
0.30
SYMBOL
E
D
HE
A
A2
A1
Q1
e
b
c
L
NOTES:
1. All dimensions are in mm.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. All specifications comply to EIAJ SC70.
5. Die is facing up for mold and facing down for trim/form,
ie: reverse trim/form.
6. Package surface to be mirror finish.
0.650 BCS
Part Number Ordering Information
No. of
Part Number
Devices
Container
ATF-36163-TR1
3000
7" Reel
ATF-36163-TR2
10000
13" Reel
ATF-36163-BLK
100
antistatic bag
ATF-36163-TR1G
3000
7" Reel
ATF-36163-TR2G
10000
13" Reel
ATF-36163-BLKG
100
antistatic bag
Note:
For lead-free option, the part number will have the
character “G” at the end.
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-36163-TR1 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36163-TR2 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36163-BLK | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR1 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR1G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-36163-BLKG | 功能描述:射频GaAs晶体管 Transistor GaAs High Frequency RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-36163-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-36163-G | 制造商:Avago Technologies 功能描述:Transistor,RF,PHEMT,9,5dB GA,ATF-36163 |
| ATF-36163-TR1 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:1.5-18 GHz Surface Mount Pseudomorphic HEMT |
| ATF-36163-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs High Frequency RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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