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参数资料
| 型号： | ATF-36163-BLK |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SC-70, 6 PIN |
| 文件页数： | 2/11页 |
| 文件大小： | 112K |
| 代理商： | ATF-36163-BLK |
10
Tape Dimensions and Product Orientation
For Outline 63
Device Orientation
USER
FEED
DIRECTION
COVER TAPE
CARRIER
TAPE
REEL
END VIEW
8 mm
4 mm
TOP VIEW
36
P
P0
P2
F
W
C
D1
D
E
A0
10
° MAX.
t1 (CARRIER TAPE THICKNESS)
Tt (COVER TAPE THICKNESS)
10
° MAX.
B0
K0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
2.40
± 0.10
2.40
± 0.10
1.20
± 0.10
4.00
± 0.10
1.00 + 0.25
0.094
± 0.004
0.094
± 0.004
0.047
± 0.004
0.157
± 0.004
0.039 + 0.010
CAVITY
DIAMETER
PITCH
POSITION
D
P0
E
1.55
± 0.10
4.00
± 0.10
1.75
± 0.10
0.061 + 0.002
0.157
± 0.004
0.069
± 0.004
PERFORATION
WIDTH
THICKNESS
W
t1
8.00 + 0.30 - 0.10
0.254
± 0.02
0.315 + 0.012
0.0100
± 0.0008
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P2
3.50
± 0.05
2.00
± 0.05
0.138
± 0.002
0.079
± 0.002
DISTANCE
WIDTH
TAPE THICKNESS
C
Tt
5.40
± 0.10
0.062
± 0.001
0.205 + 0.004
0.0025
± 0.0004
COVER TAPE
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-36163-TR1 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36163-TR2 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36163-BLK | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR1 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR1G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-36163-BLKG | 功能描述:射频GaAs晶体管 Transistor GaAs High Frequency RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-36163-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-36163-G | 制造商:Avago Technologies 功能描述:Transistor,RF,PHEMT,9,5dB GA,ATF-36163 |
| ATF-36163-TR1 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:1.5-18 GHz Surface Mount Pseudomorphic HEMT |
| ATF-36163-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs High Frequency RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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