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参数资料
| 型号： | ATF-511P8-TR1 |
| 元件分类： | 功率晶体管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
| 封装： | 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8 |
| 文件页数： | 10/16页 |
| 文件大小： | 447K |
| 代理商： | ATF-511P8-TR1 |
3
ATF-511P8 Electrical Specifications
TA = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 200 mA unless otherwise specified.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Vgs
Operational Gate Voltage
Vds = 4.5V, Ids = 200 mA
V
0.25
0.51
0.8
Vth
Threshold Voltage
Vds = 4.5V, Ids = 32 mA
V
—
0.28
—
Idss
Saturated Drain Current
Vds = 4.5V, Vgs = 0V
A
—
16.4
—
Gm
Transconductance
Vds = 4.5V, Gm =
Idss/Vgs;
mmho
—
2178
—
Vgs = Vgs1 – Vgs2
Vgs1 = 0.55V, Vgs2 = 0.5V
Igss
Gate Leakage Current
Vds = 0V, Vgs = -4.5V
A
-27
-2
—
NF
Noise Figure[1]
f = 2 GHz
dB
—
1.4
—
f = 900 MHz
dB
—
1.2
—
G
Gain[1]
f = 2 GHz
dB
13.5
14.8
16.5
f = 900 MHz
dB
—
17.8
—
OIP3
Output 3rd Order Intercept Point [1,2]
f = 2 GHz
dBm
38.5
41.7
—
f = 900 MHz
dBm
—
43
—
P1dB
Output 1dB Compressed [1]
f = 2 GHz
dBm
28.5
30
—
f = 900 MHz
dBm
—
29.6
—
PAE
Power Added Efficiency
f = 2 GHz
%
52
68.9
—
f = 900 MHz
%
—
68.6
—
ACLR
Adjacent Channel Leakage
Offset BW = 5 MHz
dBc
—
-58.9
—
Power Ratio[1,3]
Offset BW = 10 MHz
dBc
—
-62.7
—
Notes:
1. Measurements obtained using production test board described in Figure 6 and PAE tested at P1dB condition.
2. I ) 2 GHz OIP3 test condition: F1 = 2.0 GHz, F2 = 2.01 GHz and Pin = -5 dBm per tone.
II ) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 910 MHz and Pin = -5 dBm per tone.
3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
- Test Model 1
- Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
- Freq = 2140 MHz
- Pin = -5 dBm
- Channel Integrate Bandwidth = 3.84 MHz
4. Use proper bias, board, heatsink and derating designs to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and
application note for more details.
Input
50 Ohm
Transmission
Line and
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.69
Γ_ang = -164°
(1.1 dB loss)
Output
Matching Circuit
Γ_mag = 0.65
Γ_ang = -163°
(0.9 dB loss)
DUT
50 Ohm
Transmission
Line and
Drain Bias T
(0.3 dB loss)
Output
Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE and ACLR measurements. This circuit achieves a
trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-511P8-TR2 | 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-52189-BLK | 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-52189-TR1 | 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-52189-TR2 | 功能描述:射频GaAs晶体管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-521P8 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:High Linearity Enhancement Mode[1] Pseudomorphic 2x2 mm2 LPCC[3] Package |
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