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| 型号： | ATF-52189-BLK |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | LEAD FREE PACKAGE-3 |
| 文件页数： | 2/18页 |
| 文件大小： | 2247K |
| 代理商： | ATF-52189-BLK |
10
ATF-52189 Typical Performance Curves, continued
Tuned for Optimal P1dB at Vd = 4.5V, Ids = 200 mA, Over Temperature and Frequency.
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase depending
on amount of RF drive.
Figure 41. OIP3 vs. Temperature and
Frequency at optimum P1dB.
FREQUENCY (GHz)
OIP3
(dBm)
0.5
4
1
1.5
2
2.5
3
3.5
40
38
36
34
32
30
28
-40
°C
25
°C
80
°C
Figure 42. Gain vs. Temperature and
Frequency at optimum P1dB.
FREQUENCY (GHz)
GAIN
(dB)
0.5
4
1
1.5
2
2.5
3
3.5
18
16
14
12
10
8
6
-40
°C
25
°C
80
°C
Figure 43. P1dB vs. Temperature and
Frequency at optimum P1dB.
FREQUENCY (GHz)
P1dB
(dBm)
0.5
4
1
1.5
2
2.5
3
3.5
30
29.5
29
28.5
28
27.5
27
-40
°C
25
°C
80
°C
Figure 44. PAE vs. Temperature and
Frequency at optimum P1dB.
FREQUENCY (GHz)
PAE
(%)
0.5
4
1
1.5
2
2.5
3
3.5
60
55
50
45
40
35
30
-40
°C
25
°C
80
°C
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-52189-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-521P8-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-521P8-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-521P8-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-52189-TR1 | 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-52189-TR2 | 功能描述:射频GaAs晶体管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-521P8 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:High Linearity Enhancement Mode[1] Pseudomorphic 2x2 mm2 LPCC[3] Package |
| ATF-521P8-BLK | 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-521P8-BLK | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
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