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参数资料
| 型号： | ATF-531P8-TR2 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封装： | 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, DFP-N, LCC-8 |
| 文件页数： | 1/15页 |
| 文件大小： | 248K |
| 代理商： | ATF-531P8-TR2 |
ATF-531P8
High Linearity Enhancement Mode[1] Pseudomorphic HEMT
in 2x2 mm2 LPCC[3] Package
Data Sheet
Description
Avago Technologies’ ATF531P8 is a singlevoltage high
linearity, low noise EpHEMT housed in an 8lead JEDEC
standard leadless plastic chip carrier (LPCC[3]) package.
The device is ideal as a high linearity, lownoise, medium
power amplifier. Its operating frequency range is from 50
MHz to 6 GHz.
The thermally efficient package measures only 2 mm
x 2 mm x 0.75 mm. Its backside metalization provides
excellent thermal dissipation as well as visual evidence
of solder reflow. The device has a Point MTTF of over 300
years at a mounting temperature of +85°C. All devices are
100% RF & DC tested.
Pin Connections and Package Marking
Features
Single voltage operation
High linearity and gain
Low noise figure
Excellent uniformity in product specifications
Small package size:
2.0 x 2.0 x 0.75 mm
Point MTTF > 300 years[2]
MSL1 and leadfree
Tapeandreel packaging option available
Specifications
2 GHz; 4V, 135 mA (Typ.)
38 dBm output IP3
0.6 dB noise figure
20 dB gain
10.7 dB LFOM[4]
24.5 dBm output power at 1 dB gain compression
Applications
Frontend LNA Q1 and Q2 driver or predriver ampli
fier for Cellular/PCS and WCDMA wireless infrastruc
ture
Driver amplifier for WLAN, WLL/RLL and MMDS ap
plications
General purpose discrete EpHEMT for other high
linearity applications
Note:
Package marking provides orientation and identification:
“3P” = Device Code
“x” = Date code indicates the month of manufacture.
Notes:
1. Enhancement mode technology employs a single positive V
gs, eliminating the need of negative gate voltage associated with conventional
depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data.
3. Conforms to JEDEC reference outline MO229 for DRPN
4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power.
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
3Px
Top View
Pin 8
Source
(Thermal/RF
Gnd)
Pin 7 (Drain)
Pin 6
Pin 5
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Bottom View
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-54143-BLK | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR1 | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR2 | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR1G | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-BLKG | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF54143 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-54143 | 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343 |
| ATF-54143-BLK | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-54143-BLKG | 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-54143-TR1 | 功能描述:IC TRANS E-PHEMT 2GHZ SOT-343 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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