- 您现在的位置：买卖IC网 > PDF目录42903 > ATF-531P8-TR2 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 PDF资料下载
参数资料
| 型号： | ATF-531P8-TR2 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封装： | 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, DFP-N, LCC-8 |
| 文件页数： | 11/15页 |
| 文件大小： | 248K |
| 代理商： | ATF-531P8-TR2 |
5
ATF-531P8 Typical Performance Curves (at 5°C unless specified otherwise)
Tuned for Optimal OIP3
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. The objective
of load pull is to optimize OIP3 and therefore may tradeoff Small Signal Gain, P1dB and VSWR.
Figure 8. OIP3 vs. Ids and Vds at 900 MHz.
3V
4V
5V
Ids (mA)
45
40
35
30
25
20
75
180
105
90
135
150
165
120
OIP3
(dBm)
Figure 9. OIP3 vs. Ids and Vds at 2 GHz.
3V
4V
5V
Ids (mA)
45
40
35
30
25
20
75
180
105
90
135
150
165
120
OIP3
(dBm)
Figure 10. OIP3 vs. Ids and Vds at 3.9 GHz.
3V
4V
5V
Ids (mA)
45
40
35
30
25
20
75
180
105
90
135
150
165
120
OIP3
(dBm)
Figure 11. Small Signal Gain vs. Ids and Vds
at 900 MHz.
3V
4V
5V
Ids (mA)
17
16
15
14
13
12
11
10
75
180
105
90
135
150
165
120
GAIN
(dB)
Figure 12. Small Signal Gain vs. Ids and Vds
at 2 GHz.
3V
4V
5V
Ids (mA)
17
16
15
14
13
12
11
10
75
180
105
90
135
150
165
120
GAIN
(dB)
Figure 13. Small Signal Gain vs. Ids and Vds
at 3.9 GHz.
3V
4V
5V
Ids (mA)
12
10
8
6
4
2
0
75
180
105
90
135
150
165
120
GAIN
(dB)
Figure 14. P1dB vs. Idq and Vds at 900 MHz.
3V
4V
5V
Idq (mA)
30
25
20
15
10
75
180
105
90
135
150
165
120
P1dB
(dBm)
Figure 15. P1dB vs. Idq and Vds at 2 GHz.
3V
4V
5V
Idq (mA)
30
25
20
15
10
75
180
105
90
135
150
165
120
P1dB
(dBm)
Figure 16. P1dB vs. Idq and Vds at 3.9 GHz.
3V
4V
5V
Idq (mA)
30
25
20
15
10
75
180
105
90
135
150
165
120
P1dB
(dBM)
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-54143-BLK | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR1 | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR2 | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR1G | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-BLKG | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF54143 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-54143 | 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343 |
| ATF-54143-BLK | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-54143-BLKG | 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-54143-TR1 | 功能描述:IC TRANS E-PHEMT 2GHZ SOT-343 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
发布紧急采购，3分钟左右您将得到回复。