参数资料
型号: ATF-54143-TR1G
厂商: AGILENT TECHNOLOGIES INC
元件分类: 小信号晶体管
英文描述: C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封装: PLASTIC, SC-70, 4 PIN
文件页数: 15/17页
文件大小: 212K
代理商: ATF-54143-TR1G
7
ATF-54143 Typical Scattering Parameters,
VDS = 3V, IDS = 60 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.99
-18.9
28.84
27.66
167.6
0.01
80.0
0.54
-14.0
34.42
0.5
0.81
-80.8
26.04
20.05
128.0
0.03
52.4
0.40
-58.8
28.25
0.9
0.71
-117.9
22.93
14.01
106.2
0.04
41.8
0.29
-83.8
25.44
1.0
0.69
-124.4
22.24
12.94
102.2
0.05
40.4
0.27
-88.5
24.13
1.5
0.64
-149.8
19.40
9.34
86.1
0.05
36.1
0.21
-105.2
22.71
1.9
0.62
-164.9
17.66
7.64
75.6
0.06
33.8
0.17
-114.7
21.05
2.0
0.62
-168.3
17.28
7.31
73.3
0.06
33.3
0.17
-117.0
20.86
2.5
0.60
176.2
15.58
6.01
61.8
0.07
30.1
0.13
-129.7
19.34
3.0
0.60
162.3
14.15
5.10
51.0
0.08
26.5
0.11
-146.5
18. 04
4.0
0.62
137.1
11.81
3.90
30.8
0.09
17.1
0.10
165.2
1 4.87
5.0
0.66
115.5
9.87
3.11
11.7
0.11
6.8
0.14
131.5
13.27
6.0
0.69
97.2
8.22
2.58
-6.4
0.12
-3.9
0.18
112.4
11.72
7.0
0.70
80.2
6.85
2.20
-24.0
0.13
-15.8
0.20
94.3
10.22
8.0
0.72
62.2
5.58
1.90
-41.8
0.14
-28.0
0.23
70.1
9.02
9.0
0.76
45.0
4.40
1.66
-59.9
0.15
-39.6
0.29
50.6
8.38
10.0
0.83
28.4
3.06
1.42
-78.7
0.15
-55.1
0.38
36.8
8.71
11.0
0.85
13.9
1.60
1.20
-95.8
0.15
-68.6
0.46
24.4
7.55
12.0
0.88
-0.2
0.43
1.05
-111.1
0.15
-80.9
0.51
11.3
7.55
13.0
0.89
-14.6
-0.65
0.93
-128.0
0.15
-94.9
0.55
-5.2
6.70
14.0
0.88
-30.6
-1.98
0.80
-146.1
0.14
-109.3
0.61
-20.8
5.01
15.0
0.88
-45.0
-3.62
0.66
-162.7
0.13
-122.9
0.66
-35.0
3.73
16.0
0.88
-54.5
-5.37
0.54
-176.6
0.12
-133.7
0.70
-45.8
2.54
17.0
0.88
-62.5
-6.83
0.46
171.9
0.12
-143.2
0.73
-56.1
1.57
18.0
0.92
-73.4
-8.01
0.40
157.9
0.11
-156.3
0.76
-68.4
2.22
Freq
Fmin
Γopt
Rn/50
Ga
GHz
dB
Mag.
Ang.
dB
0.5
0.15
0.34
42.3
0.04
28.50
0.9
0.20
0.32
62.8
0.04
24.18
1.0
0.22
0.32
67.6
0.04
23.47
1.9
0.42
0.27
116.3
0.04
18.67
2.0
0.45
0.27
120.1
0.04
18.29
2.4
0.52
0.26
145.8
0.04
16.65
3.0
0.59
0.29
178.0
0.05
15.56
3.9
0.70
0.36
-145.4
0.05
13.53
5.0
0.93
0.47
-116.0
0.10
12.13
5.8
1.16
0.52
-98.9
0.18
11.10
6.0
1.19
0.55
-96.5
0.20
10.95
7.0
1.26
0.60
-77.1
0.37
9.73
8.0
1.63
0.62
-56.1
0.62
8.56
9.0
1.69
0.70
-38.5
0.95
7.97
10.0
1.73
0.79
-21.5
1.45
7.76
Notes:
1. F
min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters,
VDS = 3V, IDS = 60 mA
Figure 20. MSG/MAG and |S21|
2 vs.
Frequency at 3V, 60 mA.
MAG
S21
FREQUENCY (GHz)
MSG/MAG
and
S
21
(dB)
020
10
515
40
35
30
25
20
15
10
5
0
-5
10
-15
MSG
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