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参数资料
| 型号： | ATF-541M4-BLK |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | 1.4 MM X 1.2 MM, 0.7 MM HEIGHT, MINIATURE PACKAGE-4 |
| 文件页数： | 1/16页 |
| 文件大小： | 166K |
| 代理商： | ATF-541M4-BLK |
Agilent ATF-541M4 Low Noise
Enhancement Mode
Pseudomorphic HEMT in a
Miniature Leadless Package
Data Sheet
Description
Agilent Technologies’s
ATF-541M4 is a high linearity,
low noise, single supply
E-PHEMT housed in a miniature
leadless package.
The ATF-541M4’s small size and
low profile makes it ideal for the
design of hybrid module and
other space-constraint devices.
The device can be used in appli-
cations such as TMA and front
end LNA for Cellular/PCS and
WCDMA base stations, LNA and
driver amplifiers for Wireless
Data and 802.11b WLAN.
In addition, the device’s superior
RF performance at higher
frequency makes it an ideal
candidate for high frequency
applications such as WLL,
802.11a WLAN, 5 –6 GHz UNII
and HIPERLAN applications.
Features
High linearity performance
Single Supply Enhancement Mode
Technology[1]
Very low noise figure
Excellent uniformity in product
specifications
800 micron gate width
Miniature leadless package
1.4 mm x 1.2 mm x 0.7 mm
Tape-and-Reel packaging option
available
Specifications
2 GHz; 3V, 60 mA (Typ.)
35.8 dBm output 3rd order intercept
21.4 dBm output power at 1 dB gain
compression
0.5 dB noise figure
17.5 dB associated gain
Applications
Low Noise Amplifier and Driver
Amplifier for Cellular/PCS and
WCDMA Base Stations
LNA and Driver Amplifier for
WLAN, WLL/RLL and MMDS
applications
General purpose discrete E-PHEMT
for ultra low noise applications in
the 450 MHz to 10 GHz frequency
range
Note:
1. Enhancement mode technology requires
positive Vgs, thereby eliminating the need for
the negative gate voltage associated with
conventional depletion mode devices.
MiniPak 1.4 mm x 1.2 mm Package
Pin Connections and
Package Marking
Note:
Top View. Package marking provides orientation,
product identification and date code.
“R” = Device Type Code
“x” = Date code character. A different
character is assigned for each month and
year.
Source
Pin 3
Gate
Pin 2
Source
Pin 1
Drain
Pin 4
Rx
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-541M4-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-BLKG | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-541M4-BLK | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
| ATF-541M4-TR1 | 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-541M4-TR2 | 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF55143 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143 | 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343 |
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