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参数资料
| 型号： | ATF-541M4-BLK |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | 1.4 MM X 1.2 MM, 0.7 MM HEIGHT, MINIATURE PACKAGE-4 |
| 文件页数： | 6/16页 |
| 文件大小： | 166K |
| 代理商： | ATF-541M4-BLK |
14
ATF-541M4 Die Model
GATE
SOURCE
INSIDE Package
Port
G
Num=1
C
C1
C=0.28 pF
Port
S1
Num=2
SOURCE
DRAIN
Port
S2
Num=4
Port
D
Num=3
L
L6
L=0.147 nH
R=0.001
C
C2
C=0.046 pF
L
L7
L=0.234 nH
R=0.001
MSub
TLINP
TL3
Z=Z2 Ohm
L=23.6 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL9
Z=Z2 Ohm
L=11 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
VAR
VAR1
K=5
Z2=85
Z1=30
Var
Egn
TLINP
TL1
Z=Z2/2 Ohm
L=22 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL2
Z=Z2/2 Ohm
L=20 0 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL7
Z=Z2/2 Ohm
L=5.2 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL5
Z=Z2 Ohm
L=27.5 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
L
L1
L=0.234 nH
R=0.001
L
L4
L=0.281 nH
R=0.001
GaAsFET
FET1
Mode1=MESFETM1
Mode=Nonlinear
MSUB
MSub2
H=25.0 mil
Er=9.6
Mur=1
Cond=1.0E+50
Hu=3.9e+034 mil
T=0.15 mil
TanD=0
Rough=0 mil
ATF-541M4 Minipak Model
0.5
0.020
0.4
0.016
0.4
0.016
1.1
0.043
0.3
0.012
0.5
0.020
0.3
0.012
Figure 3. PCB Pad Print for Minipak 1412.
Package (mm [inches ]).
This model can be used as a design tool. It has been tested on ADS for various specifications. However, for
more precise and accurate design, please refer to the measured data in this data sheet. For future
improvements, Agilent reserves the right to change these models without prior notice.
This pad print provides allow-
ance for package placement by
automated assembly equipment
without adding excessive
parasitics that could impair the
high frequency performance of
the ATF-541M4. The layout is
shown with a footprint of the
ATF-541M4 superimposed on the
PCB pads for reference.
For Further Information
The information presented here is
an introduction to the use of the
ATF-541M4 enhancement mode
PHEMT. More detailed application
circuit information is available
from Agilent Technologies. Consult
the web page or your local Agilent
Technologies sales representative.
NFET=yes
PFET=no
Vto=0.3
Beta=0.888
Lambda=72e-3
Alpha=13
Tau=
Tnom=16.85
Idstc=
Ucrit=-0.72
Vgexp=1.91
Gamds=1e-4
Vtotc=
Betatce=
Rgs=0.25 Ohm
Rf=
Gscap=2
Cgs=1.732 pF
Cgd=0.255 pF
Gdcap=2
Fc=0.65
Rgd=0.25 Ohm
Rd=1.0125 Ohm
Rg=1.7 Ohm
Rs=0.3375 Ohm
Ld=
Lg=0.188 nH
Ls=
Cds=0.273 pF
Rc=195 Ohm
Crf=0.1 F
Gsfwd=
Gsrev=
Gdfwd=
Gdrev=
R1=
R2=
Vbi=0.95
Vbr=
Vjr=
Is=
Ir=
Imax=
Xti=
Eg=
N=
Fnc=1 MHz
R=0.08
P=0.2
C=0.1
Taumdl=no
wVgfwd=
wBvgs=
wBvgd=
wBvds=
wldsmax=
wPmax=
AllParams=
Advanced_Curtice2_Model
MESFETM1
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-541M4-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-BLKG | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-541M4-BLK | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
| ATF-541M4-TR1 | 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-541M4-TR2 | 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF55143 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143 | 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343 |
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